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MX0912B250Y

NXP Semiconductors

MX0912B250Y by NXP Semiconductors

MX0912B250Y by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 20V, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,324 parts In-Stock

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Anansix

USA . 1,913 parts In-Stock

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Digiode

USA . 97 parts In-Stock

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97

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One Stop Electronics

USA . 955 parts In-Stock

1+ parts

$59.050

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955

$59.050

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Corphita

USA . 2,305 parts In-Stock

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2,305

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UNI Independent Distributors

Spain . 2,041 parts In-Stock

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Overview

Elevate your RF applications with the MX0912B250Y from NXP Semiconductors—a leader in innovation and reliability. This NPN bipolar junction transistor combines robust ceramic construction with a sleek design, making it perfect for high-performance amplification needs. Experience superior power gain, exceptional temperature resistance, and seamless surface mounting that deliver unmatched efficiency and durability. Trust in NXP’s legacy of excellence to enhance your projects with cutting-edge technology!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRE

The ceramic and metal-sealed construction ensures durability and resistance to environmental factors, making this transistor suitable for demanding applications.

Polarity or Channel Type: NPN

As an NPN transistor, it provides excellent current amplification, which is ideal for amplifier applications.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it an efficient choice for various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, it is optimized for frequency response and performance in signal amplification.

Surface Mount: YES

Surface mount technology allows for compact designs and easy integration into modern circuit boards, enhancing overall system performance.

Minimum Power Gain (Gp): 7 dB

With a minimum power gain of 7 dB, it provides effective signal amplification, ensuring robust performance in various circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of PCB space, facilitating easier mounting and integration into circuit layouts.

Terminal Form: FLAT

Flat terminals promote stable connections and reduce the risk of mechanical stress on solder joints, enhancing reliability.

Highest Frequency Band: L BAND

Operating in the L band, it is suitable for a wide range of RF applications, making it versatile for various communication systems.

No. of Terminals: 2

With only 2 terminals, it simplifies the design and reduces the footprint on the circuit board, facilitating compact layouts.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides secure placement, ensuring stability and reliability in demanding conditions.

Maximum Operating Temperature: 200 °C

A maximum operating temperature of 200 °C allows for use in high-temperature environments, making it reliable for various applications.

Maximum Collector-Emitter Voltage: 20 V

With a maximum collector-emitter voltage of 20 V, it offers protection against voltage spikes, enhancing circuit longevity.

Transistor Element Material: SILICON

Silicon as the element material provides a balance of performance and cost-effectiveness, making it widely used in power electronics.

Terminal Position: DUAL

Dual terminal positions allow for flexibility in circuit design, facilitating various configurations and connections.

Case Connection: BASE

Base connection optimizes signal input for amplification processes, ensuring greater efficiency and performance in applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MX0912B250Y attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MX0912B250Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-342-0755, 5961013420755

NIIN

013420755

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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