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BLU10/12

NXP Semiconductors

BLU10/12 by NXP Semiconductors

BLU10/12 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 41W, operates at ultra-high frequencies, and offers a min power gain of 8 dB. Ideal for high-performance communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 1,284 parts In-Stock

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Anansix

USA . 447 parts In-Stock

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Digiode

USA . 385 parts In-Stock

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One Stop Electronics

USA . 1,626 parts In-Stock

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$30.050

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UNI Independent Distributors

Spain . 5,399 parts In-Stock

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Corphita

USA . 1,727 parts In-Stock

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Northwest PG Solutions

USA . 1,340 parts In-Stock

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Native Components

USA . 305 parts In-Stock

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Overview

Unlock exceptional performance with the BLU10/12 by NXP Semiconductors—a premier choice in RF Power Bipolar Junction Transistors. Renowned for their reliability and efficiency, NXP delivers unmatched quality, ensuring your designs thrive across applications like amplifiers in ultra-high-frequency scenarios. Experience superior power gain, robust thermal performance, and a compact design that seamlessly integrates into your systems, providing lasting value and enhanced functionality. Elevate your projects with proven technology that sets industry standards!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The durable ceramic and metal-sealed construction enhances the longevity and reliability of the transistor in demanding environments.

Polarity or Channel Type: NPN

NPN transistors are well-suited for high-speed applications, making this product ideal for various amplification and switching tasks.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, providing ease of use in various applications.

Transistor Application: AMPLIFIER

Designed for amplification, this BJT is perfect for use in audio and radio frequency applications, boosting signal quality.

Minimum Power Gain (Gp): 8 dB

A minimum gain of 8 dB indicates solid amplification capabilities, making this transistor suitable for enhancing low-level signals.

Package Shape: ROUND

The round package shape contributes to better thermal management and efficient installation in compact spaces.

Terminal Form: FLAT

Flat terminals offer easier soldering and reliable connections, enhancing assembly efficiency in circuit designs.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra high frequency band, this transistor meets the demands of advanced communication applications.

No. of Terminals: 4

Having four terminals provides multiple connection options, essential for various configurations and circuit designs.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount style allows for secure mounting and efficient thermal management in high-power applications.

Maximum Power Dissipation Ambient: 41 W

A high power dissipation rating ensures reliable operation even under substantial load conditions, enhancing overall performance.

Minimum DC Current Gain (hFE): 25

This minimum current gain signifies reliable performance in amplification applications, making it suitable for various electronic circuits.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can function in extreme environments, ensuring robustness and longevity.

Maximum Collector-Emitter Voltage: 16 V

A collector-emitter voltage rating of 16 V allows the transistor to safely operate in low-voltage applications without performance loss.

Transistor Element Material: SILICON

Silicon as the element material provides versatility and consistent performance across a wide range of temperatures and conditions.

Maximum Collector Current (IC): 1.6 A

A maximum collector current of 1.6 A makes this transistor suitable for driving moderate loads effectively, enhancing its application range.

Terminal Position: RADIAL

Radial terminal positioning facilitates easy integration into existing PCB layouts, improving design flexibility.

Case Connection: ISOLATED

Isolated case connection improves safety by reducing the risk of short circuits, making it reliable for sensitive applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLU10/12 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

41 W

Minimum Power Gain (Gp):

8 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLU10/12 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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