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BLU15/12

NXP Semiconductors

BLU15/12 by NXP Semiconductors

BLU15/12 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 35W, operates at ultra-high frequencies, and offers a min power gain of 7.8 dB. Its robust design supports high temperatures up to 200 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,620 parts In-Stock

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Anansix

USA . 2,390 parts In-Stock

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2,390

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Vyrian

USA . 185 parts In-Stock

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185

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One Stop Electronics

USA . 1,444 parts In-Stock

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$60.050

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UNI Independent Distributors

Spain . 7,941 parts In-Stock

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Corphita

USA . 1,752 parts In-Stock

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Northwest PG Solutions

USA . 711 parts In-Stock

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711

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Native Components

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Overview

Unlock unparalleled performance with the BLU15/12 from NXP Semiconductors—a premier choice for RF power applications. Renowned for its exceptional quality and reliability, this NPN transistor delivers superior amplification in ultra-high frequency bands, ensuring your systems run smoothly and efficiently. Experience robust power handling and thermal stability, empowering your designs with efficiency and longevity. Elevate your projects with the trusted innovation of NXP—where excellence meets your needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The durable and stable ceramic, metal-sealed co-fired package provides excellent thermal management and enhances reliability in harsh environments.

Polarity or Channel Type: NPN

The NPN configuration is well-suited for high-speed switching and amplification applications, making it versatile for various circuits.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits while ensuring reliable performance.

Transistor Application: AMPLIFIER

Optimized for amplification, this transistor is ideal for applications requiring signal strength enhancement.

Minimum Power Gain (Gp): 7.8 dB

A minimum power gain of 7.8 dB ensures significant signal amplification, making it suitable for various RF applications.

Package Shape: ROUND

The round package shape allows for efficient heat dissipation and easier mounting options in diverse designs.

Terminal Form: FLAT

Flat terminals facilitate straightforward soldering and ensure a solid electrical connection for optimal performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Supports operation at ultra high frequencies, essential for advanced communication systems and RF applications.

No. of Terminals: 4

The four-terminal configuration allows for simplified design integration and improved functionality in circuit layouts.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount style enables stable mechanical attachment and enhances thermal performance.

Maximum Power Dissipation Ambient: 35 W

With a maximum power dissipation of 35 W, this transistor can handle significant power levels, ensuring reliable performance in demanding conditions.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 provides reliable current amplification, enhancing the transistor's overall efficiency and effectiveness.

Maximum Operating Temperature: 200 °C

The capability to operate at temperatures up to 200 °C ensures reliability in high-temperature environments, boosting operational safety.

Maximum Collector-Emitter Voltage: 16 V

With a maximum collector-emitter voltage of 16 V, the transistor can operate efficiently in low-voltage RF applications, increasing versatility.

Transistor Element Material: SILICON

Silicon as the transistor element material ensures good electrical performance and is widely recognized for its efficiency in high-frequency applications.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A supports robust current handling, making it suitable for power amplification tasks.

Terminal Position: RADIAL

Radial terminal positioning allows for space-efficient layouts while simplifying PCB assembly.

Case Connection: ISOLATED

The isolated case connection enhances safety by reducing the risk of short circuits, promoting reliable operation in various applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLU15/12 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

35 W

Minimum Power Gain (Gp):

7.8 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLU15/12 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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