Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLU15/12 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 35W, operates at ultra-high frequencies, and offers a min power gain of 7.8 dB. Its robust design supports high temperatures up to 200 °C.
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The durable and stable ceramic, metal-sealed co-fired package provides excellent thermal management and enhances reliability in harsh environments.
The NPN configuration is well-suited for high-speed switching and amplification applications, making it versatile for various circuits.
A single configuration simplifies design and integration into circuits while ensuring reliable performance.
Optimized for amplification, this transistor is ideal for applications requiring signal strength enhancement.
A minimum power gain of 7.8 dB ensures significant signal amplification, making it suitable for various RF applications.
The round package shape allows for efficient heat dissipation and easier mounting options in diverse designs.
Flat terminals facilitate straightforward soldering and ensure a solid electrical connection for optimal performance.
Supports operation at ultra high frequencies, essential for advanced communication systems and RF applications.
The four-terminal configuration allows for simplified design integration and improved functionality in circuit layouts.
The post/stud mount style enables stable mechanical attachment and enhances thermal performance.
With a maximum power dissipation of 35 W, this transistor can handle significant power levels, ensuring reliable performance in demanding conditions.
A minimum DC current gain of 15 provides reliable current amplification, enhancing the transistor's overall efficiency and effectiveness.
The capability to operate at temperatures up to 200 °C ensures reliability in high-temperature environments, boosting operational safety.
With a maximum collector-emitter voltage of 16 V, the transistor can operate efficiently in low-voltage RF applications, increasing versatility.
Silicon as the transistor element material ensures good electrical performance and is widely recognized for its efficiency in high-frequency applications.
A maximum collector current of 3 A supports robust current handling, making it suitable for power amplification tasks.
Radial terminal positioning allows for space-efficient layouts while simplifying PCB assembly.
The isolated case connection enhances safety by reducing the risk of short circuits, promoting reliable operation in various applications.
RF Power Bipolar Junction Transistors (BJT) BLU15/12 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
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No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
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Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Minimum Power Gain (Gp):
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BLU15/12 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LM317D2TG
Onsemi
LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
LM555CMX
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LM317T/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;
FDN306P
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
CRG0805F10R
TE Connectivity
TE Connectivity's CRG0805F10R is a 10 ohm fixed resistor with 1% tolerance and 0.125 W power dissipation. It features thick film technology, SMT package style, and matte tin over nickel terminal finish. Ideal for surface mount applications in electronics, offering a temperature coefficient of 200 ppm/°C and operating voltage of 150 V.
2N7002
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
OPA2277UA/2K5
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM555CM
Fairchild Semiconductor
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
2N2222A
Semicoa
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N5819HW-7-F
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Raytheon Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;
FDLL4148
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
Digitron Semiconductors
1N4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SS14
Dc Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBT3906LT1G
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
LM358N
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
PTB20017
Infineon Technologies
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-CDFM-F4; JESD-609 Code: e3;
BDP950H6327XTSA1
Infineon's BDP950H6327XTSA1 is a PNP RF Power BJT with 60V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly.
AM83135-050
STMicroelectronics
STMicroelectronics AM83135-050 is a NPN RF BJT transistor with 8A IC, 312W power dissipation, and S Band frequency. Ideal for switching applications in high-power circuits. Features ceramic-metal package, flat terminals, and flange mount style for efficient heat dissipation at up to 250 °C operating temperature.
ISL73096RHX/SAMPLE
Renesas Electronics
RF Power Bipolar Transistors;
LLE15180X
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 22 V;
RX1214B150W
NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2; Maximum Operating Temperature: 200 Cel;
BFQ293
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): .25 A; No. of Terminals: 3;
2SC2641
Toshiba
The Toshiba 2SC2641 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 7.7 dB, operates in the ultra-high frequency band, and has a max collector-emitter voltage of 17 V. Ideal for flange mount setups, it can handle up to 15 W of power dissipation at a max operating temperature of 175°C.
934050610114
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Terminal Position: DUAL; Qualification: Not Qualified;
BLX67
BLX67 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8.5 dB, operates at ultra-high frequencies, and withstands temperatures up to 150 °C. Its compact round package ensures efficient performance in various electronic devices.
C3-28
Asi Semiconductor
C3-28 by Asi Semiconductor is a NPN RF BJT with 4 terminals, 10W power dissipation, and fT of 600MHz. Ideal for ultra-high frequency band amplification applications due to its ceramic-metal package and silicon transistor element. Operates at max temp of 200°C in a single configuration with flat terminals.
AM83135-005
STMicroelectronics AM83135-005 is a NPN RF BJT transistor with 5.2 dB min power gain, suitable for S Band applications. It has a max power dissipation of 40 W and can handle up to 1.8 A collector current, making it ideal for switching operations in high-frequency circuits.
MRF1150MB
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 583 W; Maximum Collector Current (IC): 12 A; No. of Terminals: 4;
ISL73128RHVX
PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Package Style (Meter): UNCASED CHIP;
2SC2510
Toshiba's 2SC2510 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 12.2 dB, max power dissipation of 250 W, and operates in the high-frequency band up to 175°C.
5962F0721802V9A
RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Qualification: Qualified; Terminal Finish: Gold (Au);
RX1214B350YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 25 A; Transistor Application: AMPLIFIER; Qualification: Not Qualified;
MZ0921B50Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Highest Frequency Band: L BAND; Maximum Operating Temperature: 200 Cel;
MRF454
Tyco Electronics M/a-com
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MX1011B700Y
NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Terminals: 2; Terminal Form: FLAT;
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BLU10/12
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.6 A; Terminal Form: FLAT; Transistor Element Material: SILICON;
BLU11/SL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;
Supply Digital Components
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