Loading...

PZ1721B12U

NXP Semiconductors

PZ1721B12U by NXP Semiconductors

PZ1721B12U by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 27W, operates up to 200 °C, and offers a min power gain of 6.8 dB in the S band. Its ceramic, metal-sealed package ensures durability in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,184 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,184

-

-

-

-

Digiode

USA . 3,968 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,968

-

-

-

-

Anansix

USA . 2,177 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,177

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 693 parts In-Stock

1+ parts

$32.050

100+ parts

-

1k+ parts

-

10k+ parts

-

693

$32.050

-

-

-

UNI Independent Distributors

Spain . 1,611 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,611

-

-

-

-

Corphita

USA . 782 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

782

-

-

-

-

Overview

Unlock unparalleled performance with the PZ1721B12U from NXP Semiconductors—a trusted leader in innovation. This RF Power BJT excels in amplifier applications, delivering exceptional power gain while ensuring reliability and efficiency. Its robust ceramic-metal sealed design guarantees durability, making it perfect for demanding environments. Experience superior signal amplification across various S-band uses, enhancing your projects with cutting-edge technology that embodies quality and excellence.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed cofired package ensures excellent thermal performance and reliability, making it suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification, providing good performance in RF applications.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Designed for amplification, this transistor delivers efficient performance in boosting RF signals.

Surface Mount: YES

Being surface mount compatible allows for compact design and easy integration into modern electronic devices.

Minimum Power Gain (Gp): 6.8 dB

A minimum power gain of 6.8 dB indicates good signal amplification capabilities, enhancing system performance.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient layout and assembly on printed circuit boards (PCBs).

Terminal Form: FLAT

Flat terminals provide reliable electrical connections and are easier to solder in surface mount applications.

Highest Frequency Band: S BAND

Operating in the S band makes this transistor suitable for radar, satellite, and various communication applications.

No. of Terminals: 2

A 2-terminal configuration simplifies integration into circuits and reduces complexity in circuit design.

Maximum Power Dissipation: 27 W (Abs)

With a maximum power dissipation of 27 W, this transistor can handle significant power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure mounting in various applications, providing stability and durability.

Maximum Power Dissipation Ambient: 27 W

This specification ensures that the transistor maintains performance under high ambient temperatures.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature allows the transistor to function in extreme environments without failure.

Maximum Collector-Emitter Voltage: 15 V

The maximum collector-emitter voltage of 15 V provides flexibility for use in various low to medium voltage applications.

Transistor Element Material: SILICON

Silicon as the element material offers excellent thermal and electrical properties, ensuring reliable performance.

Maximum Collector Current (IC): 2 A

A maximum collector current of 2 A enables the transistor to drive higher loads, making it versatile for different designs.

Terminal Position: DUAL

Dual terminal position allows for simple connections in circuit designs and facilitates easy integration.

Case Connection: BASE

Base case connection aids in stable operation and enhances the overall effectiveness of the amplifier circuit.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) PZ1721B12U attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

27 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

6.8 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PZ1721B12U Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1