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AM81214-6

STMicroelectronics

AM81214-6 by STMicroelectronics

STMicroelectronics AM81214-6 is a NPN RF BJT transistor with 16.7W power dissipation, suitable for L Band applications. It has a max collector current of 0.82A and operates at up to 250 °C temperature, making it ideal for high-frequency switching in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,833 parts In-Stock

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3,833

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Anansix

USA . 2,287 parts In-Stock

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2,287

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Vyrian

USA . 31 parts In-Stock

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31

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,744 parts In-Stock

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$1.179

100+ parts

-

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$1.061

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1,744

$1.179

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$1.061

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MKK Technologies

India . 2,363 parts In-Stock

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$2.218

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2,363

$2.218

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DigiPath Technology Company

USA . 2,363 parts In-Stock

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$2.218

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2,363

$2.218

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Corphita

USA . 1,946 parts In-Stock

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1,946

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Northwest PG Solutions

USA . 847 parts In-Stock

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847

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Parana Technologies

USA . 820 parts In-Stock

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$1.410

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820

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$1.410

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Native Components

USA . 409 parts In-Stock

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409

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Overview

Unlock the power of RF technology with the AM81214-6 by STMicroelectronics. Manufactured with precision and expertise, this RF Power Bipolar Junction Transistor offers unparalleled quality and reliability. Ideal for switching applications in the L BAND frequency range, this NPN transistor provides a seamless solution for your electronic needs. With a maximum power dissipation of 16.7W and a minimum DC current gain of 15, the AM81214-6 delivers high performance in a compact package. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired package body materials ensures excellent thermal conductivity and durability, making this product suitable for high-power applications.

Polarity or Channel Type: NPN

The NPN polarity allows for efficient switching operations, making this transistor ideal for applications that require fast switching speeds.

Configuration: SINGLE

The single configuration simplifies the circuit design and integration process, making this transistor easy to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and fast response times.

Surface Mount: YES

Being surface mountable makes this transistor suitable for compact and space-constrained electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for easier mounting and installation in electronic circuits.

No. of Terminals: 2

With only 2 terminals, this transistor is simple to integrate into circuit designs and reduces complexity.

Maximum Power Dissipation (Abs): 16.7 W

The high maximum power dissipation capacity of 16.7 W ensures the transistor can handle high power levels without overheating.

Maximum Operating Temperature: 250 °C

With a maximum operating temperature of 250 °C, this transistor can withstand high-temperature environments.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and efficiency in electronic devices.

Maximum Collector Current (IC): 0.82 A

The maximum collector current of 0.82 A allows the transistor to handle high current loads with ease.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit connections and allows for versatile applications.

Case Connection: BASE

The base case connection offers a stable and reliable connection point for easy integration into circuits.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM81214-6 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM81214-6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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