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AM81719-040

STMicroelectronics

AM81719-040 by STMicroelectronics

STMicroelectronics AM81719-040 is a NPN BJT transistor with 6.7 dB power gain, ideal for L Band applications. It has a max power dissipation of 79.5W and can handle up to 4.8A collector current. Suitable for amplifier circuits requiring high frequency operation at temperatures up to 200 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,004 parts In-Stock

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4,004

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Anansix

USA . 2,274 parts In-Stock

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2,274

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Vyrian

USA . 196 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 32 parts In-Stock

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$0.842

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32

$0.842

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Northwest PG Solutions

USA . 463 parts In-Stock

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$0.927

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463

$0.927

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IDEA Electronic Components Group

UK . 2,305 parts In-Stock

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$1.292

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$1.163

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2,305

$1.292

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MKK Technologies

India . 1,973 parts In-Stock

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$2.429

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$2.429

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DigiPath Technology Company

USA . 1,973 parts In-Stock

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$2.429

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1,973

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Corphita

USA . 2,292 parts In-Stock

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Parana Technologies

USA . 553 parts In-Stock

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$1.544

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553

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$1.544

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Overview

Unleash the power of innovation with the AM81719-040 RF Power BJT by STMicroelectronics. Crafted with precision and expertise, this transistor offers unmatched quality and reliability in amplifier applications. With a minimum power gain of 6.7 dB and a maximum power dissipation of 79.5W, this NPN transistor is designed to deliver exceptional performance in the L Band frequency range. Trust in STMicroelectronics to provide you with cutting-edge technology that enhances your designs and elevates your projects to new heights. Experience the difference with the AM81719-040 and stay ahead of the competition.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package body material provides excellent durability and reliability, making this transistor suitable for various demanding applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for easy integration into most circuit designs, making it versatile and widely compatible.

Configuration: SINGLE

The single configuration simplifies circuit design and assembly, making this transistor user-friendly.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers excellent performance in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and enabling efficient designs.

Minimum Power Gain (Gp): 6.7 dB

With a minimum power gain of 6.7 dB, this transistor provides significant signal amplification for enhanced performance.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used and easy to work with, providing a stable base for the transistor.

Terminal Form: FLAT

The flat terminal form simplifies soldering and connection processes, ensuring a secure and reliable electrical connection.

Highest Frequency Band: L BAND

Operating in the L band frequency range, this transistor is suitable for various communication and radar applications.

No. of Terminals: 2

Having 2 terminals simplifies the installation and connection of the transistor in circuits, reducing complexity and potential errors.

Maximum Power Dissipation (Abs): 79.5 W

With a maximum power dissipation of 79.5 W, this transistor can handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure and stable mounting options, ideal for heavy-duty applications that require rugged components.

Minimum DC Current Gain (hFE): 30

Having a minimum DC current gain of 30 ensures consistent and reliable performance in amplifying current signals.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high-temperature environments, making it suitable for industrial applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides excellent voltage and temperature stability, ensuring reliable performance under various operating conditions.

Maximum Collector Current (IC): 4.8 A

With a maximum collector current of 4.8 A, this transistor can handle high current loads, making it suitable for power applications that require robust current control.

Terminal Position: DUAL

The dual terminal position allows for flexible installation and connection options, accommodating different circuit layouts and requirements.

Case Connection: BASE

The base case connection provides a secure grounding point for the transistor, ensuring proper functionality and stability in circuit operation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM81719-040 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

6.7 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

AM81719-040 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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