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LUE2003S

NXP Semiconductors

LUE2003S by NXP Semiconductors

LUE2003S by NXP is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 1.4 W, operates up to 200 °C, and supports S band frequencies. Its compact round ceramic package ensures efficient surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,461 parts In-Stock

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4,461

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Anansix

USA . 1,997 parts In-Stock

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1,997

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Vyrian

USA . 654 parts In-Stock

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654

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One Stop Electronics

USA . 1,450 parts In-Stock

1+ parts

$49.050

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1,450

$49.050

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Corphita

USA . 4,725 parts In-Stock

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4,725

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UNI Independent Distributors

Spain . 505 parts In-Stock

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505

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Overview

Unlock superior performance with the LUE2003S from NXP Semiconductors, a leader in innovation. This high-quality RF Power BJT excels in amplifier applications, delivering outstanding reliability and efficiency for S-band communications. Its robust ceramic and metal-sealed design ensures longevity even in demanding environments. Elevate your projects today with a trusted solution that combines cutting-edge technology with unmatched value and performance benefits.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed co-fired package offers excellent thermal conductivity and reliability, making the transistor suitable for high-performance applications.

Polarity or Channel Type: NPN

The NPN configuration provides efficient amplification and switching capabilities, enhancing performance in amplifier applications.

Configuration: SINGLE

A single configuration ensures simplicity and ease of integration into circuits, allowing for more compact designs.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is optimized for high linearity and gain, making it ideal for RF applications.

Surface Mount: YES

Surface mount capability allows for automated assembly and smaller PCB footprints, facilitating modern production techniques.

Package Shape: ROUND

The round package shape minimizes parasitic inductance and capacitance, which is beneficial for high-frequency applications.

Terminal Form: FLAT

Flat terminals facilitate easier soldering and better contact with the PCB, promoting reliability in electrical connections.

Highest Frequency Band: S BAND

Operating in the S band allows for a range of applications in radar and communication systems, making it versatile.

No. of Terminals: 4

With four terminals, this transistor allows for simplified connectivity while maintaining robust functionality.

Maximum Power Dissipation (Abs): 1.4 W

A maximum power dissipation of 1.4 W indicates efficient thermal management, crucial for maintaining performance under load.

Package Style (Meter): DISK BUTTON

The disk button package style supports easier handling and placement during assembly, enhancing manufacturing efficiency.

Maximum Power Dissipation Ambient: 1.4 W

Consistent power dissipation capabilities ensure reliability in varied ambient conditions, making it suitable for diverse operating environments.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature allows the transistor to function in demanding thermal conditions without failure.

Maximum Collector-Emitter Voltage: 16 V

With a maximum of 16 V, this transistor can handle moderate supply voltages efficiently, making it versatile for various circuit designs.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties and performance, contributing to the overall efficiency of the device.

Maximum Collector Current (IC): 0.09 A

A maximum collector current of 0.09 A allows sufficient current flow for amplification while maintaining safe operating conditions.

Terminal Position: RADIAL

Radial terminal positioning aids in convenient layout design on PCBs, ensuring easier integration into circuit boards.

Case Connection: EMITTER

The emitter case connection offers straightforward identification and connection in circuit layouts, reducing assembly complexity.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) LUE2003S attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Highest Frequency Band:

S BAND

JESD-30 Code:

O-CRDB-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.4 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

LUE2003S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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