Loading...

LUE2009S

NXP Semiconductors

LUE2009S by NXP Semiconductors

LUE2009S by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 3.5W, operates up to 200 °C, and offers a min power gain of 8.5 dB in the S band. Its ceramic-metal sealed package ensures durability in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,806 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,806

-

-

-

-

Anansix

USA . 2,877 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,877

-

-

-

-

Vyrian

USA . 2,434 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,434

-

-

-

-

ComSIT Distribution GmbH

Germany . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,636 parts In-Stock

1+ parts

$47.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,636

$47.050

-

-

-

UNI Independent Distributors

Spain . 6,566 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,566

-

-

-

-

Corphita

USA . 3,803 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,803

-

-

-

-

Overview

Unlock unparalleled performance with the LUE2009S from NXP Semiconductors—a trusted leader in innovative solutions. This robust RF Power BJT is expertly crafted for amplifying applications, delivering exceptional quality and reliability under demanding conditions. With its compact surface mount design and high-frequency capabilities, it’s perfect for enhancing communication systems and industrial equipment. Elevate your projects with a trusted technology partner that guarantees superior value and lasting benefits.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This robust package material ensures durability and reliability, making it suitable for harsh environments.

Polarity or Channel Type: NPN

NPN configuration allows for versatility in various amplification applications, enhancing overall performance.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces space, making it ideal for compact applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor can effectively boost signals, essential for RF applications.

Surface Mount: YES

Surface mount capability provides ease of integration into modern PCBs, facilitating automated assembly.

Minimum Power Gain (Gp): 8.5 dB

A minimum power gain of 8.5 dB ensures effective signal amplification, making it suitable for various RF applications.

Package Shape: ROUND

The round package shape enhances thermal dissipation properties and is well-suited for specific circuit layouts.

Terminal Form: FLAT

Flat terminals facilitate better contact and soldering, improving reliability and performance in circuits.

Highest Frequency Band: S BAND

Operating in the S band makes this transistor suitable for a wide range of communication and radar applications.

No. of Terminals: 4

With four terminals, this design offers improved connectivity options, allowing for more complex circuit designs.

Maximum Power Dissipation (Abs): 3.5 W

A high power dissipation rating allows this transistor to handle significant power loads without overheating.

Package Style (Meter): DISK BUTTON

The disk button style offers a stable mounting solution, enhancing mechanical connection in various applications.

Maximum Power Dissipation Ambient: 1.5 W

This rating ensures reliable operation even in ambient conditions, contributing to better longevity and performance.

Maximum Operating Temperature: 200 °C

A high max operating temperature ensures reliability under extreme conditions, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 16 V

With a collector-emitter voltage of 16 V, this transistor can be utilized in various circuit designs without risk of breakdown.

Transistor Element Material: SILICON

Silicon material enhances performance in high-frequency applications while also providing good thermal stability.

Maximum Collector Current (IC): 0.25 A

This current capacity allows for effective signal handling in various RF applications, ensuring reliable performance.

Terminal Position: RADIAL

Radial terminal positioning aids in compact circuit layouts and can simplify the design process in PCB design.

Case Connection: EMITTER

Emitter case connection facilitates better heat dissipation and safer operation in amplifier configurations.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) LUE2009S attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Highest Frequency Band:

S BAND

JESD-30 Code:

O-CRDB-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

8.5 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

LUE2009S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1