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MRF224

Motorola

MRF224 by Motorola

MRF224 by Motorola is a NPN RF Power BJT with 4.5 dB min power gain, suitable for amplifier applications in the VHF band. It has a max power dissipation of 80 W, operates up to 175°C, and features a collector current of 7 A.

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Nova Conductors

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200

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Ampacity Inc.

Singapore . 135 parts In-Stock

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$28.050

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135

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Speed Components Ltd (Excess)

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Overview

Enhance your RF amplifier capabilities with the MRF224 by Motorola. Crafted with precision and expertise, this NPN RF Power BJT transistor offers exceptional performance in the very high-frequency band, delivering a power gain of 4.5 dB and a maximum power dissipation of 80W. Whether you're looking to amplify signals or enhance your communication systems, the MRF224 ensures reliable and efficient operation. Trust in Motorola's legacy of quality and innovation, and experience the value and benefits that the MRF224 brings to your projects. Elevate your RF applications with the MRF224 today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal performance and mechanical strength, making the transistor reliable and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications due to their high current and voltage capabilities.

Minimum Power Gain (Gp): 4.5 dB

A minimum power gain of 4.5 dB indicates that this transistor can provide significant amplification for signals passing through, making it suitable for amplifier circuits.

Maximum Power Dissipation (Abs): 80 W

With a high maximum power dissipation of 80 W, this transistor can handle high power levels without being damaged, ensuring reliable performance in demanding applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175°C allows this transistor to operate efficiently even in elevated temperature environments.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF224 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Motorola

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

5

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

80 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

4.5 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF224 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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