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MRF221

Motorola

MRF221 by Motorola

MRF221 by Motorola is a NPN RF BJT with 6.3 dB power gain, ideal for amplifier applications in the VHF band. With a max power dissipation of 31W and max collector current of 2.5A, it operates at up to 175°C temperature range.

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Nova Conductors

Japan . 15 parts In-Stock

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GES GmbH

Germany . 8 parts In-Stock

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Ampacity Inc.

Singapore . 501 parts In-Stock

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$6.050

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501

$6.050

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Aranea Global

USA . 2,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 1 parts In-Stock

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Overview

Discover the power of the MRF221 by Motorola, a top-tier RF Power BJT that delivers exceptional performance and reliability. With a trusted manufacturer like Motorola behind it, this NPN transistor is designed for amplifier applications in the very high-frequency band. Offering a minimum power gain of 6.3 dB and a maximum collector current of 2.5 A, this product provides superior value and benefits to customers seeking high-quality components for their projects. Unlock the potential of your designs with the MRF221 and experience best-in-class performance like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides high durability and reliability, making the transistor suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, ensuring compatibility with a wide range of applications.

Minimum Power Gain (Gp): 6.3 dB

The minimum power gain indicates efficient signal amplification, making this transistor ideal for amplifier applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequency band applications, this transistor is capable of handling high-frequency signals effectively.

Maximum Power Dissipation (Abs): 31 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating or damage.

Maximum Collector-Emitter Voltage: 18 V

The high maximum collector-emitter voltage rating ensures that the transistor can withstand high voltage levels, enhancing its reliability.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF221 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Motorola

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

85 pF

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

5

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

6.3 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MRF221 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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