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MRF422

Asi Semiconductor

MRF422 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 35 V;

Median Price

$223.205

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13

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Verical

USA . 42 parts In-Stock

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Chip1Stop

Japan . 108 parts In-Stock

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DigiKey

USA . 20 parts In-Stock

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$297.410

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$250.705

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Mouser Electronics

USA . 119 parts In-Stock

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RFMW

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Nova Conductors

Japan . 10 parts In-Stock

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$118.860

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Vyrian

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AZTECH Wire

Italy . 654 parts In-Stock

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USA . 4,970 parts In-Stock

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$98.510

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$155.800

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One Stop Electronics

USA . 111 parts In-Stock

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Continental Prestige Electronics

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Netroflash

USA . 500 parts In-Stock

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Microchip USA

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Argo Parts USA

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Perfect Parts

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF422 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF422 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-607-4800, 5961016074800

NIIN

016074800

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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