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MRF492A

Motorola

MRF492A by Motorola

MRF492A by Motorola is a NPN RF BJT with 11 dB power gain, ideal for amplifier applications in the VHF band. With a max power dissipation of 250 W and max collector current of 20 A, it operates up to 150°C. Featuring a ceramic-metal package, it has a transition frequency of 50 MHz and collector-emitter voltage of 18 V.

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Overview

Elevate your RF power applications with the MRF492A by Motorola. With a reputation for excellence in manufacturing, Motorola delivers top-quality RF Power Bipolar Junction Transistors (BJT) that guarantee superior performance. This NPN transistor is designed for amplification in the very high frequency band, offering a minimum power gain of 11 dB and a maximum power dissipation of 250 W. Its ceramic metal-sealed cofired package ensures durability while its flat terminals make installation a breeze. Trust in Motorola's expertise and invest in the MRF492A for unmatched reliability and efficiency in your amplifier designs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides high durability and reliable performance, making this transistor suitable for harsh operating environments.

Polarity or Channel Type: NPN

The NPN channel type allows for easier integration into common amplifier circuit designs, providing increased compatibility and flexibility in usage.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for straightforward implementation in amplifier applications, making it an efficient choice for amplifier projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers optimized performance and characteristics for amplification tasks, ensuring reliable and efficient operation.

Minimum Power Gain (Gp) 11 dB

With a minimum power gain of 11 dB, this transistor provides amplification capabilities suitable for a wide range of applications, ensuring strong signal amplification and improved performance.

Package Shape: ROUND

The round package shape offers efficient heat dissipation and compact design, making installation and mounting easier while enhancing overall reliability and performance.

Terminal Form: FLAT

The flat terminal form simplifies soldering and connection processes, ensuring secure and stable connections for optimal performance in amplifier circuits.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequency band applications, this transistor offers superior performance in high-frequency signal processing, making it ideal for advanced amplifier projects that require precision and speed.

No. of Terminals: 4

The four terminals provide versatile connectivity options, allowing for customization and adaptation to different circuit configurations, enabling enhanced functionality and performance.

Maximum Power Dissipation (Abs) 250 W

With a maximum power dissipation of 250 W, this transistor can handle high power levels, making it suitable for demanding amplifier applications that require efficient power management and high performance.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style offers secure and stable mounting options, ensuring durability and reliability in amplifier installations, making it a robust choice for long-term use.

Minimum DC Current Gain (hFE) 10

With a minimum DC current gain of 10, this transistor provides consistent and reliable amplification of input signals, ensuring accurate and efficient signal processing in amplifier circuits.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150°C allows for reliable performance in high-temperature environments, ensuring stable operation and longevity for amplifier applications in various conditions.

Maximum Collector-Base Capacitance: 450 pF

The maximum collector-base capacitance of 450 pF ensures effective signal processing and stability, enabling smooth performance in amplifier circuits with minimal interference or distortion.

Maximum Collector-Emitter Voltage: 18 V

With a maximum collector-emitter voltage of 18 V, this transistor offers reliable voltage handling capability, ensuring safe and efficient operation in amplifier circuits with varying voltage requirements.

Transistor Element Material: SILICON

The silicon transistor element material provides excellent electrical properties and performance characteristics, offering reliable and stable operation in amplifier applications for consistent signal amplification.

Maximum Collector Current (IC): 20 A

The maximum collector current of 20 A allows for high current handling capacity, making this transistor suitable for amplifier circuits that require robust current amplification and performance.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures reliable and durable connections, preventing corrosion and ensuring stable operation in amplifier circuits, making it a dependable choice for long-term use.

Terminal Position: RADIAL

The radial terminal position offers convenient soldering and connection options, allowing for easy integration into amplifier circuits and ensuring secure and stable connections for optimal performance.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50 MHz, this transistor provides fast signal processing capabilities, making it suitable for high-frequency amplifier applications that require quick and efficient signal amplification.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF492A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Motorola

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

450 pF

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

11 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MRF492A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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