Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MRF492A by Motorola is a NPN RF BJT with 11 dB power gain, ideal for amplifier applications in the VHF band. With a max power dissipation of 250 W and max collector current of 20 A, it operates up to 150°C. Featuring a ceramic-metal package, it has a transition frequency of 50 MHz and collector-emitter voltage of 18 V.
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The ceramic and metal-sealed cofired package body material provides high durability and reliable performance, making this transistor suitable for harsh operating environments.
The NPN channel type allows for easier integration into common amplifier circuit designs, providing increased compatibility and flexibility in usage.
The single configuration simplifies circuit design and allows for straightforward implementation in amplifier applications, making it an efficient choice for amplifier projects.
Designed specifically for amplifier applications, this transistor offers optimized performance and characteristics for amplification tasks, ensuring reliable and efficient operation.
With a minimum power gain of 11 dB, this transistor provides amplification capabilities suitable for a wide range of applications, ensuring strong signal amplification and improved performance.
The round package shape offers efficient heat dissipation and compact design, making installation and mounting easier while enhancing overall reliability and performance.
The flat terminal form simplifies soldering and connection processes, ensuring secure and stable connections for optimal performance in amplifier circuits.
Designed for very high frequency band applications, this transistor offers superior performance in high-frequency signal processing, making it ideal for advanced amplifier projects that require precision and speed.
The four terminals provide versatile connectivity options, allowing for customization and adaptation to different circuit configurations, enabling enhanced functionality and performance.
With a maximum power dissipation of 250 W, this transistor can handle high power levels, making it suitable for demanding amplifier applications that require efficient power management and high performance.
The post/stud mount package style offers secure and stable mounting options, ensuring durability and reliability in amplifier installations, making it a robust choice for long-term use.
With a minimum DC current gain of 10, this transistor provides consistent and reliable amplification of input signals, ensuring accurate and efficient signal processing in amplifier circuits.
The maximum operating temperature of 150°C allows for reliable performance in high-temperature environments, ensuring stable operation and longevity for amplifier applications in various conditions.
The maximum collector-base capacitance of 450 pF ensures effective signal processing and stability, enabling smooth performance in amplifier circuits with minimal interference or distortion.
With a maximum collector-emitter voltage of 18 V, this transistor offers reliable voltage handling capability, ensuring safe and efficient operation in amplifier circuits with varying voltage requirements.
The silicon transistor element material provides excellent electrical properties and performance characteristics, offering reliable and stable operation in amplifier applications for consistent signal amplification.
The maximum collector current of 20 A allows for high current handling capacity, making this transistor suitable for amplifier circuits that require robust current amplification and performance.
The tin lead terminal finish ensures reliable and durable connections, preventing corrosion and ensuring stable operation in amplifier circuits, making it a dependable choice for long-term use.
The radial terminal position offers convenient soldering and connection options, allowing for easy integration into amplifier circuits and ensuring secure and stable connections for optimal performance.
With a nominal transition frequency of 50 MHz, this transistor provides fast signal processing capabilities, making it suitable for high-frequency amplifier applications that require quick and efficient signal amplification.
RF Power Bipolar Junction Transistors (BJT) MRF492A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Motorola
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Minimum Power Gain (Gp):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
MRF492A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.
SS14
General Instrument
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Toshiba
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LAN8720AI-CP-TR
Microchip Technology
LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.
LM317AEMP/NOPB
Texas Instruments
LM317AEMP/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and a max output current of 1.5A. It operates in temperatures ranging from -40°C to 125°C, making it suitable for various applications requiring precise voltage regulation in a compact package.
LL4148
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;
Sensitron Semiconductor
SMBJ18CA
Diodes Incorporated
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Digitron Semiconductors
2N2222A
Space Power Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Telcom Semiconductor
Pro-an Electronic
OPA2277UA
OPA2277UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 100 uV and micropower consumption of 1.65 mA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1000 kHz in a small outline package.
Rectron
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
BSS138LT1G
Onsemi
BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
DP83848IVVX/NOPB
Texas Instruments DP83848IVVX/NOPB is a 3.3V Ethernet transceiver with 100000 Mbps data rate, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and comes in a low profile flatpack package with matte tin finish.
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
2N7002
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
Rochester Electronics
Multicomp Pro
FDD5614P
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
3005
Microsemi
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0;
BLU60/28
BLU60/28 by NXP Semiconductors is a high-performance NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 110W, operates up to 200 °C, and offers a min power gain of 7dB in the ultra-high frequency band. Its ceramic, metal-sealed package ensures reliability in demanding environments.
MRF454
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 150 Cel;
ISL73096EHVF
Renesas Electronics
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
2N3375
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11.6 W; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified;
LXE18300X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; No. of Terminals: 2; Case Connection: EMITTER;
BLU86
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Transistor Application: AMPLIFIER; Case Connection: COLLECTOR;
2SC2510
Toshiba's 2SC2510 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 12.2 dB, max power dissipation of 250 W, and operates in the high-frequency band up to 175°C.
2SC2640
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 6 A; Terminal Form: FLAT;
MF1011B900YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Terminal Form: FLAT; Qualification: Not Qualified;
2010
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; Additional Features: HIGH RELIABILITY;
MAX2602E/W
Analog Devices
Analog Devices' MAX2602E/W is an NPN BJT transistor with a max operating temp of 150 °C, suitable for ultra-high frequency band applications. Featuring a built-in diode, it has a max collector-emitter voltage of 15V and can handle up to 1.2A collector current in a small outline package.
2N4440
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1.5 A;
MRF899
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 25 A; Transistor Application: AMPLIFIER;
BLT50
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
The Microchip Technology 3005 is an NPN RF Power BJT transistor with a max collector current of 2.5A, suitable for amplifier applications in the S Band frequency range. It features a ceramic-metal-sealed cofired package body material, flat terminal form, and dual terminal position for surface mount installation at temperatures up to 200°C.
2SA1546-AZ
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): .1 A;
BLV859
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 28 V;
AM1011-400
STMicroelectronics' AM1011-400 is an NPN RF BJT transistor with 8 dB min power gain, ideal for L Band applications. It has a max power dissipation of 880 W and can handle up to 24 A collector current. The package is ceramic-metal sealed co-fired with a flange mount style, suitable for switching operations in high-power environments.
MZ0912B350Y
RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Qualification: Not Qualified; Package Shape: RECTANGULAR;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MRF426
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 3 A; JESD-609 Code: e0;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 3 A; Package Shape: ROUND;
Tyco Electronics M/a-com
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; Terminal Form: FLAT;
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Application: AMPLIFIER; Terminal Form: FLAT;
MRF422
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Position: RADIAL; Highest Frequency Band: HIGH FREQUENCY BAND;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 35 V;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 40 V; Package Style (Meter): FLANGE MOUNT;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Form: FLAT; Qualification: Not Qualified;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 40;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Package Style (Meter): FLANGE MOUNT; Minimum Power Gain (Gp): 12 dB;
MRF422MP
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Transistor Application: AMPLIFIER;
MRF450
New Jersey Semiconductor Products
NPN; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 25 V; No. of Elements: 1; Transistor Element Material: SILICON;
MRF492A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A;
MRF401
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 3.3 A; Transistor Element Material: SILICON;
MRF429
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 16 A; Package Shape: ROUND;
MRF448
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 16 A; No. of Terminals: 4;
MRF492
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A; Maximum Power Dissipation Ambient: 250 W;
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 10;
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