Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SD1855 by STMicroelectronics is a NPN RF Power BJT with 20.6W power dissipation, suitable for L Band applications like amplifiers. It has a max collector-emitter voltage of 25V, max operating temp of 200 °C, and a min DC current gain of 15 hFE.
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Corphita
The use of ceramic and metal-sealed cofired package body material provides excellent thermal conductivity and robustness, ensuring long-term reliability in high-power applications.
NPN configuration is commonly used for amplifier applications due to its high input impedance and current gain, making it suitable for amplification circuits.
Single configuration makes it easy to design and integrate into circuits, simplifying the overall system design process.
Specifically designed for amplifier applications, ensuring optimal performance and efficiency when used in such circuits.
The round package shape allows for easy mounting and integration into various systems, providing flexibility in design.
Flat terminal form facilitates easy soldering and connection, making installation and maintenance hassle-free.
Designed for L Band frequency applications, ensuring compatibility with a wide range of RF systems operating in this band.
Having 2 terminals simplifies the connection process and reduces the chances of errors during installation.
With a high maximum power dissipation rating, this transistor can handle high-power operation without risk of overheating or failure.
The flange mount package style provides mechanical stability and easy mounting options in RF systems, ensuring secure installation.
The minimum DC current gain of 15 ensures reliable and consistent amplification performance in various operating conditions.
With a high maximum operating temperature of 200 °C, this transistor can withstand elevated temperatures in demanding applications.
The maximum collector-emitter voltage of 25V allows this transistor to be used in a variety of voltage applications without risk of damage.
Silicon is a common and reliable material for transistor elements, ensuring stable performance and longevity in circuit applications.
With a maximum collector current of 0.5A, this transistor can handle moderate current levels in amplifier circuits without saturation or breakdown.
Radial terminal position allows for easy placement and connection in circuits, enabling efficient circuit layout and design.
Having emitter as the case connection simplifies the circuit design and allows for easy integration into various amplifier circuits.
RF Power Bipolar Junction Transistors (BJT) SD1855 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Additional Features:
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Minimum DC Current Gain (hFE):
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JESD-30 Code:
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Maximum Operating Temperature:
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Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
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SD1855 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NSN
5999-01-625-0857, 5999016250857
NIIN
016250857
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
2N2222A
Allegro MicroSystems
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SS14
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Vishay Intertechnology
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
1N4148
Toshiba
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WT
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Philips Components
LM78L05ACMX/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
Shenzhen Yixinsemi Electronics
Baneasa S A
LL4148
Onsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Pro-an Electronic
Zowie Technology
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;
Central Semiconductor
LM358AN
STMicroelectronics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
CRCW080510R0FKEA
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
M39029/58-360
Itt Cannon
CONNECTOR ACCESSORY; Alternate Contacts: 030-2042-000; DIN Conformity: NO; Contact Gender: MALE; Terminal Type: WIRE; MIL-Connector Accessory Name: CONTACT;
LAN8720A-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
Fairchild Semiconductor
BAV99
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Weitron Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-CDFM-F2;
BDP948E6327HTSA1
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; JESD-609 Code: e3;
934045800114
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F2; Terminal Form: FLAT;
LXE18300XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; Package Style (Meter): FLANGE MOUNT; Minimum Power Gain (Gp): 9 dB;
2SC3597D
Onsemi's 2SC3597D is an NPN RF Power BJT with a max. collector-emitter voltage of 60V and max. collector current of 0.5A. Ideal for switching applications, it has a nominal transition frequency of 800MHz and comes in a rectangular package style for through-hole mounting.
SD1433
SD1433 by STMicroelectronics is a NPN RF BJT with 4 terminals, suitable for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 58W, operating temperature up to 175 °C, and collector current of 2.5A.
LTE21025RTRAY
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: ROUND;
AM1011-400
STMicroelectronics' AM1011-400 is an NPN RF BJT transistor with 8 dB min power gain, ideal for L Band applications. It has a max power dissipation of 880 W and can handle up to 24 A collector current. The package is ceramic-metal sealed co-fired with a flange mount style, suitable for switching operations in high-power environments.
BFR94
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .15 A; Qualification: Not Qualified;
5962F0721806VXC
Renesas Electronics
PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; JESD-30 Code: R-CDFP-F16;
LZ1418E100R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 4 A; Terminal Position: DUAL;
SD1437
SD1437 by STMicroelectronics is a NPN RF Power BJT with 4 terminals, operating in the ultra high frequency band. It has a max power dissipation of 19.4W and max collector-emitter voltage of 25V. Ideal for amplifier applications due to its silicon element material and single configuration design.
AM1214-325
STMicroelectronics' AM1214-325 is a NPN RF BJT transistor with 1250W power dissipation, ideal for L Band switching applications. It has a max collector current of 25A and operates at up to 250 °C temperature. The package is ceramic-metal sealed co-fired with flange mount style and dual terminal position.
BLV12
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1600 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 16 V;
SD1727
SD1727 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 233W, max collector-emitter voltage of 55V, and operates up to 200 °C.
5962F0721801VXC
RF Power Bipolar Transistors; JESD-609 Code: e4; Qualification: Qualified; Terminal Finish: GOLD;
BLY91C
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 525 MHz; Maximum Collector Current (IC): .9 A; No. of Elements: 1;
BLW50F
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 2.5 A;
BDP948H6433XTMA1
Infineon's BDP948H6433XTMA1 is a PNP RF Power BJT with 45V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mount assembly.
BLW32
The NXP Semiconductors BLW32 is an NPN RF Power BJT with a single configuration, ideal for amplifier applications in the UHF band. It offers a min power gain of 11 dB, max collector-emitter voltage of 30V, and can handle up to 10.8W power dissipation at 200°C.
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SD1897
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 2.3 A; Transistor Element Material: SILICON;
SD1888-03
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2.6 A; Terminal Form: FLAT;
SD1893-03
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 43 W; Maximum Collector Current (IC): 4.4 A; Maximum Collector-Emitter Voltage: 15 V;
SD1894
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.2 W; Maximum Collector Current (IC): .375 A; Terminal Position: DUAL;
SD1895-03
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.2 W; Maximum Collector Current (IC): 3 A; Qualification: Not Qualified;
SD1898
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 87.5 W; Maximum Collector Current (IC): 7.8 A; No. of Elements: 1;
SD1899
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Maximum Collector Current (IC): 3.5 A; Highest Frequency Band: L BAND;
SD1868
Microsemi
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1600 MHz; Maximum Power Dissipation (Abs): 58.3 W; Maximum Collector Current (IC): 5.2 A;
SD1893
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1650 MHz; Maximum Power Dissipation (Abs): 43 W; Maximum Collector Current (IC): 4.4 A;
SD1853
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Terminal Finish: TIN LEAD; Terminal Position: RADIAL;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Maximum Collector Current (IC): 3.8 A; Transistor Application: AMPLIFIER;
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