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SD1888-03

STMicroelectronics

SD1888-03 by STMicroelectronics

SD1888-03 by STMicroelectronics is a NPN RF BJT with 50W power dissipation, suitable for L Band applications. It has a max collector current of 2.6A and operates at up to 200 °C, making it ideal for amplifier circuits in high-frequency environments. The transistor's flange mount package and dual terminal position offer easy integration into various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,527 parts In-Stock

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2,527

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Vyrian

USA . 1,243 parts In-Stock

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1,243

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Anansix

USA . 485 parts In-Stock

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485

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,970 parts In-Stock

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$1.348

100+ parts

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$1.213

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1,970

$1.348

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$1.213

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MKK Technologies

India . 751 parts In-Stock

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$2.534

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751

$2.534

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DigiPath Technology Company

USA . 751 parts In-Stock

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$2.534

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751

$2.534

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Corphita

USA . 4,099 parts In-Stock

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4,099

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Parana Technologies

USA . 1,199 parts In-Stock

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$1.612

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1,199

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$1.612

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Overview

Looking to amplify your signal with top-of-the-line technology? Look no further than the SD1888-03 RF Power Bipolar Junction Transistor by STMicroelectronics. With a reputation for delivering high-quality products, STMicroelectronics ensures that this NPN transistor offers superior performance in amplifier applications within the L Band frequency range. Its plastic/epoxy packaging and flange mount style make it both durable and easy to install, while its maximum power dissipation of 50W guarantees optimal efficiency. Trust STMicroelectronics to provide you with the best solution for your RF power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor configuration, making it easier to integrate into circuitry.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing high performance in amplification tasks.

Surface Mount: YES

Allows for easy surface mounting onto circuit boards, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular shape is space-efficient and can be easily integrated into circuit layouts.

Terminal Form: FLAT

Flat terminals provide a secure connection and ease of soldering during assembly.

Highest Frequency Band: L BAND

Optimized for operations in the L band frequency range, providing reliable performance in that spectrum.

No. of Terminals: 2

Simple two-terminal design for easy integration into circuitry.

Maximum Power Dissipation (Abs): 50 W

Handles high power dissipation levels, making it suitable for applications requiring high power output.

Package Style (Meter): FLANGE MOUNT

Flange mount package style for secure mounting and efficient heat dissipation.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain ensures stable amplification performance in various operating conditions.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows for reliable performance in elevated temperature environments.

Maximum Collector-Emitter Voltage: 12 V

Handles up to 12V collector-emitter voltage, suitable for applications requiring higher voltage operation.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for transistor operation.

Maximum Collector Current (IC): 2.6 A

Capable of handling up to 2.6A collector current, suitable for applications with higher current requirements.

Terminal Position: DUAL

Dual terminal position for secure connections and flexibility in circuit layouts.

Case Connection: BASE

Base case connection for stable operation and easy integration into circuit designs.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1888-03 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1888-03 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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