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SD1894

STMicroelectronics

SD1894 by STMicroelectronics

SD1894 by STMicroelectronics is an NPN RF BJT transistor with a single configuration, ideal for amplifier applications in the L Band. It offers a min power gain of 10 dB, max power dissipation of 9.2 W, and operates at temperatures up to 200 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,158 parts In-Stock

1+ parts

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4,158

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Digiode

USA . 1,897 parts In-Stock

1+ parts

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1,897

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Anansix

USA . 445 parts In-Stock

1+ parts

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445

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 431 parts In-Stock

1+ parts

$1.622

100+ parts

-

1k+ parts

$1.460

10k+ parts

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431

$1.622

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$1.460

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MKK Technologies

India . 1,864 parts In-Stock

1+ parts

$3.050

100+ parts

-

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1,864

$3.050

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DigiPath Technology Company

USA . 1,864 parts In-Stock

1+ parts

$3.050

100+ parts

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1,864

$3.050

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Corphita

USA . 1,759 parts In-Stock

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1,759

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Parana Technologies

USA . 129 parts In-Stock

1+ parts

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$1.939

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129

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$1.939

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Overview

Unleash the power of innovation with the SD1894 RF Power Bipolar Junction Transistor by STMicroelectronics. This single NPN transistor is a game-changer in amplifier applications, offering a minimum power gain of 10 dB and a maximum power dissipation of 9.2 W. With a package style of flange mount and a terminal position of dual, this transistor is designed for optimum performance in the L Band frequency range. Trust in the quality and reliability of STMicroelectronics to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the SD1894 and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and provide high power gain.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Surface mount design allows for easy installation on circuit boards, saving space and improving overall design flexibility.

Minimum Power Gain (Gp): 10 dB

A minimum power gain of 10 dB ensures strong amplification capabilities.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement on circuit boards and efficient use of space.

Terminal Form: FLAT

Flat terminal form simplifies connection and ensures a secure fit.

Highest Frequency Band: L BAND

Designed for use in the L band frequency range, suitable for various applications.

No. of Terminals: 2

Having 2 terminals makes it easy to connect and integrate into circuits.

Maximum Power Dissipation (Abs): 9.2 W

A high maximum power dissipation ensures the transistor can handle large power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides stability and ease of installation in various electronic systems.

Maximum Power Dissipation Ambient: 12.5 W

With a maximum ambient power dissipation of 12.5 W, the transistor can operate effectively under different temperature conditions.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures consistent and reliable amplification in circuits.

Maximum Operating Temperature: 200 °C

Capable of operating at a high temperature of 200 °C, making it suitable for demanding environments.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors, known for its reliability and stability.

Maximum Collector Current (IC): 0.375 A

Capable of handling a maximum collector current of 0.375 A, suitable for various applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections and enhances overall performance.

Case Connection: BASE

Base case connection ensures stability and efficient heat dissipation during operation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1894 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

12.5 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1894 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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