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MC3346P

Onsemi

MC3346P by Onsemi

MC3346P by Onsemi is a NPN BJT with 5 elements, 14 terminals, and fT of 550 MHz. It has a max IC of 0.05 A and VCE of 15 V. Ideal for RF applications due to its high transition frequency and collector current capacity.

Median Price

$3.320

Lifecycle Status

Suppliers In-Stock

40

In-Stock Inventory

1k+

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TEDSS.com

USA . 27 parts In-Stock

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Voyager Components

USA . 50 parts In-Stock

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American Microsemiconductor Inc.

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Forefront Electronics and Design

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Electronic Expediters

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Prism Electronics

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A2Z Electronics, Inc.

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M&R Communications

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First Choice Components Inc.

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Sinequanon

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LittleDiode

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Corohmni

South Africa . 316 parts In-Stock

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TANS Electronics

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RC Electronics

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Problanco Electronics

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GreenTree Electronics

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Overview

Upgrade your RF power applications with the MC3346P from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. The MC3346P is a versatile RF Power BJT that offers exceptional performance and efficiency, making it perfect for a wide range of applications. With 5 elements and 14 terminals, this transistor provides the power and functionality you need without compromising on quality. Trust Onsemi to deliver cutting-edge technology that meets all your RF power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material offers good thermal conductivity and insulation properties, ensuring proper functioning and longevity of the transistor.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this transistor suitable for various electronic applications.

Maximum Collector-Emitter Voltage: 15 V

With a maximum collector-emitter voltage of 15V, this transistor can handle higher voltage applications effectively.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability and performance, making this transistor a reliable choice for electronic circuits.

Nominal Transition Frequency (fT): 550 MHz

With a high nominal transition frequency of 550 MHz, this transistor is capable of operating at higher frequencies, making it suitable for RF power applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MC3346P attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e0

No. of Elements:

5

No. of Terminals:

14

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MC3346P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-094-8224, 5961010948224

NIIN

010948224

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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