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2SC2879

Toshiba

2SC2879 by Toshiba

Toshiba's 2SC2879 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 13 dB, max power dissipation of 250 W, and operates in the high-frequency band up to 100 MHz. Ideal for surface mount setups, it has a max collector current of 25 A and can handle temperatures up to 175°C.

Median Price

$49.300

Lifecycle Status

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American Microsemiconductor Inc.

USA . 6 parts In-Stock

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Nova Conductors

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ACDS - Activité Composants Distribution Service

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Corohmni

South Africa . 169 parts In-Stock

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$1.278

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Ampacity Inc.

Singapore . 228 parts In-Stock

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$37.050

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Metaverse IC Inc.

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Unlock the power of innovation with the Toshiba 2SC2879 RF Power Bipolar Junction Transistor. Designed for high-frequency applications, this NPN transistor offers a minimum power gain of 13 dB and a maximum power dissipation of 250 W, providing exceptional performance and reliability. Whether you're amplifying signals or enhancing communication systems, the 2SC2879 delivers top-notch quality and efficiency. Trust Toshiba, a leading manufacturer known for superior technology and cutting-edge solutions, to bring you the best in transistor technology. Elevate your projects with the 2SC2879 and experience the difference in performance and value.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent thermal conduction and durability, making this transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and provide good performance for RF applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into existing amplifier setups.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying RF signals.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and resources during manufacturing.

Minimum Power Gain (Gp): 13 dB

With a minimum power gain of 13 dB, this transistor can boost signal strength effectively, making it suitable for RF amplification tasks.

Maximum Power Dissipation (Abs): 250 W

High maximum power dissipation allows the transistor to handle high power levels without overheating, ensuring reliable operation.

Maximum Collector Current (IC): 25 A

The high maximum collector current rating of 25 A enables this transistor to handle large current loads, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates good frequency response and performance for RF applications requiring high-speed signal switching.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC2879 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

250 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

13 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC2879 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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