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SD1135-03

STMicroelectronics

SD1135-03 by STMicroelectronics

SD1135-03 by STMicroelectronics is a NPN RF BJT with 15W power dissipation, suitable for amplifier applications in VHF band. It has 4 terminals, max. collector current of 1.7A, and operates up to 200 °C. Ideal for high-frequency amplification needs due to its very high frequency band capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,543 parts In-Stock

1+ parts

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4,543

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Digiode

USA . 1,831 parts In-Stock

1+ parts

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1,831

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Anansix

USA . 1,303 parts In-Stock

1+ parts

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1,303

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,001 parts In-Stock

1+ parts

$0.382

100+ parts

-

1k+ parts

$0.344

10k+ parts

-

2,001

$0.382

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$0.344

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MKK Technologies

India . 2,007 parts In-Stock

1+ parts

$0.718

100+ parts

-

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2,007

$0.718

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DigiPath Technology Company

USA . 2,007 parts In-Stock

1+ parts

$0.718

100+ parts

-

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-

10k+ parts

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2,007

$0.718

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Corphita

USA . 1,319 parts In-Stock

1+ parts

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1,319

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Parana Technologies

USA . 436 parts In-Stock

1+ parts

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100+ parts

$0.456

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436

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$0.456

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Overview

Upgrade your RF power amplifiers with the SD1135-03 from STMicroelectronics. With a focus on quality and reliability, STMicroelectronics offers top-notch products that deliver outstanding performance. This NPN BJT transistor is perfect for amplifier applications in the very high-frequency band, providing customers with exceptional value and benefits. Trust in STMicroelectronics to provide you with the power and efficiency you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability, making the product ideal for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product suitable for such applications.

Configuration: SINGLE

Single configuration simplifies the design and integration process, making it easier to use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and enabling high-density designs.

Package Shape: ROUND

Round shape provides a compact form factor, suitable for various applications where space is limited.

Terminal Form: FLAT

Flat terminals ensure secure connections and easy soldering, enhancing the overall reliability of the product.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Ideal for applications that require operation in very high frequency bands, allowing for versatile usage.

No. of Terminals: 4

With 4 terminals, the product offers flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 15 W

High maximum power dissipation ensures the product can handle high power levels without overheating, improving reliability.

Package Style (Meter): DISK BUTTON

Disk button package style offers a unique and compact design, suitable for various applications.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures stable and consistent performance in amplifier circuits.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, the product can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 16 V

Maximum collector-emitter voltage of 16 V allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon transistor element material provides high efficiency and reliability, ensuring long-term performance.

Maximum Collector Current (IC): 1.7 A

High maximum collector current rating allows for handling of larger currents, making it suitable for high-power applications.

Terminal Position: RADIAL

Radial terminal position allows for easy and secure mounting onto PCBs, simplifying installation.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1135-03 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRDB-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1135-03 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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