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MRF858S

NXP Semiconductors

MRF858S by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Minimum Power Gain (Gp): 11 dB; Terminal Form: FLAT;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,450 parts In-Stock

1+ parts

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4,450

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Digiode

USA . 2,894 parts In-Stock

1+ parts

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2,894

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Anansix

USA . 2,019 parts In-Stock

1+ parts

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2,019

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 2,134 parts In-Stock

1+ parts

$10.050

100+ parts

-

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10k+ parts

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2,134

$10.050

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A-Z Elektronik GmbH

Germany . 4,770 parts In-Stock

1+ parts

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4,770

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Corphita

USA . 2,356 parts In-Stock

1+ parts

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2,356

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Metaverse IC Inc.

Canada . 600 parts In-Stock

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600

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Kepictronics

USA . 189 parts In-Stock

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189

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UNI Independent Distributors

Spain . 91 parts In-Stock

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91

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) MRF858S attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

WITH EMITTER BALLASTING RESISTORS

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFP-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

20 W

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

11 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF858S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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