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SD1456(TCC3100)

STMicroelectronics

SD1456(TCC3100) by STMicroelectronics

SD1456(TCC3100) by STMicroelectronics is an NPN RF power BJT designed for amplifiers, featuring a max collector current of 16 A and operating temp up to 200 °C. It comes in a flat terminal, flange mount package suitable for very high frequency applications. With a max collector-emitter voltage of 33 V, it's ideal for robust electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,071 parts In-Stock

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4,071

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Digiode

USA . 3,596 parts In-Stock

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3,596

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Anansix

USA . 1,888 parts In-Stock

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1,888

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,763 parts In-Stock

1+ parts

$1.389

100+ parts

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$1.250

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1,763

$1.389

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$1.250

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MKK Technologies

India . 1,189 parts In-Stock

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$2.612

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1,189

$2.612

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DigiPath Technology Company

USA . 1,189 parts In-Stock

1+ parts

$2.612

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1,189

$2.612

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Corphita

USA . 3,869 parts In-Stock

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3,869

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Parana Technologies

USA . 2,343 parts In-Stock

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$1.661

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2,343

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$1.661

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Overview

Elevate your designs with the SD1456(TCC3100) from STMicroelectronics, a leader in innovative semiconductor solutions. This high-performance NPN RF Power BJT delivers exceptional amplification for very high-frequency applications, ensuring reliability and efficiency. With its robust construction and superior thermal management, it seamlessly integrates into various devices, empowering your projects with unmatched quality and cutting-edge technology. Experience the advantage of STMicroelectronics’ expertise and transform your ideas into reality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures robust protection, making the transistor suitable for various environmental conditions.

Polarity or Channel Type: NPN

Being an NPN transistor, it provides efficient amplification and switching capabilities, widely used in analog and digital circuits.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor offers high performance for audio and RF amplification.

Surface Mount: YES

The surface mount feature allows for compact designs and automated assembly processes, reducing manufacturing complexity and cost.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy integration into circuit boards, optimizing space efficiency.

Terminal Form: FLAT

Flat terminals enhance contact reliability and heat dissipation, making installation straightforward and reliable.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band, this transistor is ideal for high-frequency applications, ensuring superior performance.

No. of Terminals: 8

With 8 terminals, it provides ample connection options for various circuits, enhancing versatility in applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure attachment in different setups, improving stability in operation.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature makes this transistor suitable for demanding environments and applications.

Maximum Collector-Emitter Voltage: 33 V

The 33 V rating ensures reliable operation in various circuits, providing flexibility in design and application.

Transistor Element Material: SILICON

Silicon is a commonly used material, offering good thermal stability and electrical performance for dependable operation.

Maximum Collector Current (IC): 16 A

This high collector current rating allows for driving substantial loads, making it suitable for power applications.

Terminal Position: DUAL

Dual terminal positioning enhances design options and simplifies layout considerations in circuit designs.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1456(TCC3100) attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

WITH EMITTER BALLASTING RESISTORS

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

33 V

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F8

No. of Terminals:

8

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1456(TCC3100) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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