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C3-28

Asi Semiconductor

C3-28 by Asi Semiconductor

C3-28 by Asi Semiconductor is a NPN RF BJT with 4 terminals, 10W power dissipation, and fT of 600MHz. Ideal for ultra-high frequency band amplification applications due to its ceramic-metal package and silicon transistor element. Operates at max temp of 200°C in a single configuration with flat terminals.

Median Price

$233.038

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Mouser Electronics

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Element14

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American Microsemiconductor Inc.

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Nova Conductors

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Whistler Technology

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AZTECH Wire

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Aranea Global

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Continental Prestige Electronics

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Overview

Elevate your amplifier game with the C3-28 RF Power BJT by Asi Semiconductor. Crafted with quality ceramic and metal-sealed cofired materials, this NPN transistor offers unparalleled performance in the ultra-high frequency band. With a maximum power dissipation of 10W and a nominal transition frequency of 600 MHz, the C3-28 is designed to deliver exceptional reliability and efficiency in amplifier applications. Trust in Asi Semiconductor's expertise and invest in the C3-28 for top-notch performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material:

CERAMIC, METAL-SEALED COFIRED - Provides excellent thermal conductivity and high reliability, making it ideal for high-power applications.

Polarity or Channel Type:

NPN - Offers high efficiency and low noise operation, suitable for use in audio amplifiers.

Configuration:

SINGLE - Simplifies circuit design and ensures easy integration into existing systems.

Transistor Application:

AMPLIFIER - Designed specifically for amplification tasks, delivering reliable and consistent performance.

Package Shape:

ROUND - Allows for easy mounting and ensures stable mechanical connections in various applications.

Terminal Form:

FLAT - Facilitates efficient heat dissipation and enhances overall thermal performance.

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND - Enables operation in complex communication systems requiring high-frequency signals.

No. of Terminals:

4 - Provides flexibility in circuit design and allows for customization based on specific requirements.

Maximum Power Dissipation (Abs):

10 W - Handles high power levels efficiently and reliably, ensuring long-term performance.

Package Style (Meter):

POST/STUD MOUNT - Simplifies installation and ensures secure mounting in various industrial settings.

Maximum Operating Temperature:

200 °C - Allows for reliable operation in high-temperature environments, ensuring consistent performance.

Maximum Collector-Base Capacitance:

7 pF - Minimizes signal distortion and ensures accurate amplification in high-frequency applications.

Transistor Element Material:

SILICON - Provides high reliability and stable performance over a wide range of operating conditions.

Maximum Collector Current (IC):

1 A - Supports high current loads without compromising performance, making it suitable for power amplification tasks.

Terminal Position:

RADIAL - Facilitates easy connections and ensures compatibility with standard circuit configurations.

Nominal Transition Frequency (fT):

600 MHz - Offers high-speed operation and precise signal amplification, ideal for applications requiring fast response times.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) C3-28 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

7 pF

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

C3-28 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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