Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLV947 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 200W, operates at ultra-high frequencies, and supports surface mount with a rectangular ceramic package. Ideal for high-performance RF circuits.
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This robust material choice enhances durability and reliability, making the transistor suitable for high-performance applications.
The NPN configuration allows for efficient current flow control, making this transistor ideal for a wide range of amplification applications.
The common emitter configuration provides higher gain and better performance for amplification tasks, ensuring effective signal management.
Designed specifically as an amplifier, this transistor is tailored to enhance signal strength, ideal for various RF applications.
Surface mount capabilities facilitate compact designs and improve manufacturing efficiency, making it suitable for modern electronic devices.
The rectangular shape is optimal for efficient space usage on PCBs, allowing for better integration in complex circuit designs.
Flat terminals provide ease of soldering and better thermal dissipation, enhancing reliability and performance in real-world applications.
Its capability to operate in the UHF band ensures effective performance in high-frequency applications like communications and broadcasting.
Two elements in a single package minimize space and complexity while allowing for multi-functional applications, improving circuit efficiency.
Four terminals facilitate better connection options and enhance circuit designs, allowing flexibility in electrical configurations.
The flange mount style provides secure attachment and improved heat dissipation, ensuring stable operation under high-load conditions.
With a high power dissipation capability, this transistor can handle significant loads without overheating, making it suitable for demanding applications.
A minimum gain of 30 allows for effective amplification of weak signals, ensuring better performance in audio and RF applications.
Operating effectively at high temperatures ensures reliability in extreme environments, maintaining performance integrity in challenging conditions.
A maximum voltage rating of 28V makes this transistor suitable for various power applications without the risk of breakdown.
Silicon as a semiconductor material provides good thermal stability and high performance, making this transistor a reliable choice for engineers.
This high collector current rating allows for considerable load handling, making it ideal for high-power amplifiers and RF applications.
Dual terminal positions enhance versatility in circuit design, allowing for more flexible layouts and simplified PCB manufacturing.
Emitter case connection simplifies circuit integration and improves thermal management, essential for high-efficiency operations.
RF Power Bipolar Junction Transistors (BJT) BLV947 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
BLV947 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
2N2222A
Loras Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LL4148GS08
Temic Semiconductors
LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.
BSS123NH6327XTSA1
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
MBRM140T1G
Onsemi
MBRM140T1G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage, 1A max output current, and 0.3V max forward voltage. It is used in applications requiring small outline surface mount diodes for efficient power management.
LM317T
Bay Linear
Other Regulators; No. of Terminals: 3; No. of Outputs: 1; Surface Mount: NO; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel;
KSZ9031RNXIC
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
1N4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WT
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Shenzhen Yixinsemi Electronics
PIC18F4550-I/PT
Microchip Technology
PIC18F4550-I/PT by Microchip: 8-bit microcontroller with 44 terminals, 48 MHz clock frequency, and USB connectivity. Ideal for industrial applications requiring low power mode and 10-bit ADC channels.
ULN2803ADW
Texas Instruments
ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.
LM555CMX
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
Space Power Electronics
MMBT2907ALT1G
MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
BAV99
STMicroelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
General Instrument
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR0520LT1
MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.
Allegro MicroSystems
RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2SC2782A
Toshiba
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 20 A; No. of Elements: 1;
AM1214-300
STMicroelectronics' AM1214-300 is an NPN RF BJT with 6.3 dB min power gain, ideal for L Band applications. It has a max power dissipation of 730W and can handle up to 18.75A collector current. Suitable for switching purposes, this transistor operates at temperatures up to 250 °C in a ceramic-metal-sealed co-fired package.
MAX2601ESA-T
Maxim Integrated
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Maximum Collector-Emitter Voltage: 15 V; Package Style (Meter): SMALL OUTLINE;
5962F0721801V9A
Renesas Electronics
RF Power Bipolar Transistors; Terminal Finish: GOLD; Qualification: Qualified; JESD-609 Code: e4;
TAN15
Microsemi
Microsemi's TAN15 is a NPN RF BJT transistor for amplifier applications. With a max operating temperature of 200°C, it operates in L Band frequency range. The package is ceramic-metal-sealed co-fired with flange mount style and flat terminals for surface mounting.
BLT94
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Maximum Collector-Emitter Voltage: 10 V; Qualification: Not Qualified;
MX0912B351YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; Transistor Element Material: SILICON; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS;
BLS2731-50
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 6 A; No. of Terminals: 2;
BLU99/SL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; Minimum Power Gain (Gp): 10.5 dB;
SD1563
SD1563 by STMicroelectronics is an NPN RF Power BJT with a max power dissipation of 875W, ideal for ultra-high frequency band applications. Featuring a single configuration and flat terminal form, it operates at up to 175 °C with a max collector current of 21.6A.
SD1458
SD1458 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and a max power dissipation of 140W. Ideal for amplifier applications in the VHF band, it has a max collector-emitter voltage of 35V and operates at up to 175 °C.
SD1274-01
STMicroelectronics' SD1274-01 is a NPN RF Power BJT with 70W power dissipation, 175MHz fT, and 16V VCE. Ideal for high-frequency amplifier applications due to its very high frequency band capability. Package: PLASTIC/EPOXY, SINGLE configuration, FLANGE MOUNT style.
PTB20134
NPN; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Position: DUAL; Transistor Application: AMPLIFIER; Case Connection: EMITTER;
RZ2731B16W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; Package Shape: RECTANGULAR; Terminal Form: FLAT;
BLT50T/R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 175 Cel; No. of Elements: 1;
BLW91
BLW91 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 30 W, operates up to 1 GHz, and supports a collector current of 1.5 A. Its robust ceramic-metal sealed package ensures reliability in ultra-high frequency environments.
MAPR-000912-500S00
Tyco Electronics M/a-com
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Terminals: 2;
SD1538-02
SD1538-02 by STMicroelectronics is a NPN RF BJT transistor with 11A IC, 583W Pd, and L Band frequency. Ideal for switching applications in high-power environments due to its single configuration and silicon element material. Suitable for surface mount installations with a flange mount package style.
2N4128
The Texas Instruments 2N4128 is an NPN RF BJT with a max. collector-emitter voltage of 40V and max. power dissipation of 40W. Ideal for very high frequency band applications, it has a nominal transition frequency of 400MHz and can handle a max. collector current of 5A.
MSC81250M
STMicroelectronics' MSC81250M is a NPN RF BJT transistor with 600W power dissipation, ideal for L Band switching applications. Featuring a single configuration, it has a max collector current of 17.8A and operates at up to 200 °C temperature.
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BLV946
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 9 dB;
BLV92
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDFM-F6;
BLV909
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
BLV945A
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLV93
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): 1.6 A; Maximum Operating Temperature: 200 Cel;
BLV910
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL;
BLV904
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Collector-Emitter Voltage: 28 V;
BLV920
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 3 A; Minimum Power Gain (Gp): 10 dB;
BLV909-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Case Connection: ISOLATED;
BLV94
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 6; Transistor Application: AMPLIFIER;
BLV934
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Terminal Form: FLAT; Minimum Power Gain (Gp): 9 dB;
BLV91
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.5 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;
BLV945B
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR; Terminal Form: FLAT;
BLV904TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; No. of Terminals: 8; JESD-30 Code: R-CDSO-G8;
BLV91/SL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Minimum Power Gain (Gp): 6.5 dB;
BLV90
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLV904-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Qualification: Not Qualified; Minimum Power Gain (Gp): 11 dB;
BLV909T/R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
BLV935
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 4 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
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