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BLV945B

NXP Semiconductors

BLV945B by NXP Semiconductors

BLV945B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates at ultra-high frequencies, and offers a min power gain of 8.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

USA . 4,458 parts In-Stock

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Anansix

USA . 2,499 parts In-Stock

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Vyrian

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One Stop Electronics

USA . 509 parts In-Stock

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$41.050

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509

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Corphita

USA . 3,605 parts In-Stock

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UNI Independent Distributors

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Native Components

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Northwest PG Solutions

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Overview

Elevate your RF applications with the BLV945B from NXP Semiconductors, a trusted leader in innovative technology. Built for performance and reliability, this NPN RF Power BJT delivers exceptional power gain and efficiency, making it ideal for amplifiers in ultra-high frequency bands. Its robust ceramic-metal sealed design ensures durability, providing you with consistent quality and superior thermal management. Choose BLV945B for unmatched performance and peace of mind in your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The durable ceramic and metal-sealed construction ensures effective heat dissipation and longevity, making the transistor reliable in demanding applications.

Polarity or Channel Type: NPN

NPN configuration is widely used in amplifier applications, providing versatility and ease of integration with existing circuit designs.

Configuration: COMMON EMITTER, 2 ELEMENTS

The common emitter configuration offers excellent voltage and current gain, ideal for amplification tasks, which enhances performance in RF applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this product excels in enhancing signal strength, making it perfect for RF applications.

Surface Mount: YES

Surface mount technology allows for compact design and ease of automated assembly, beneficial for modern high-density applications.

Minimum Power Gain (Gp): 8.5 dB

With a minimum gain of 8.5 dB, this transistor ensures robust performance in amplifying weak signals, crucial for RF systems.

Package Shape: RECTANGULAR

The rectangular shape is conducive for efficient layout on PCBs, supporting space optimization in electronic designs.

Terminal Form: FLAT

The flat terminal design facilitates reliable soldering on PCB, ensuring strong electrical connections and reduced mechanical stress.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high frequency band, it is suitable for applications such as telecommunications and broadcasting.

No. of Elements: 2

The dual-element design increases reliability and provides enhanced performance characteristics in amplification scenarios.

No. of Terminals: 4

Four terminals provide flexibility in circuit design, enabling various configurations and connections for optimal performance.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances ease of installation and provides a secure mounting solution, crucial for stability in RF applications.

Maximum Power Dissipation Ambient: 60 W

A maximum power dissipation of 60 W allows for handling high power levels without overheating, ensuring reliability in demanding environments.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures effective amplification, allowing efficient signal processing in various applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can function reliably in extreme environments, suitable for industrial applications.

Maximum Collector-Base Capacitance: 30 pF

Low collector-base capacitance minimizes signal distortion and enhances frequency performance, making it ideal for high-speed applications.

Maximum Collector-Emitter Voltage: 27 V

A maximum collector-emitter voltage of 27 V ensures compatibility with a wide range of circuits, enhancing versatility.

Transistor Element Material: SILICON

Silicon material provides excellent thermal stability and amplifying characteristics, a standard in high-performance electronic components.

Maximum Collector Current (IC): 2 A

A maximum collector current of 2 A enables this transistor to handle significant load currents, essential for robust circuit designs.

Terminal Position: DUAL

Dual terminal positioning supports versatile layout options and simplifies PCB design, making it easier to integrate into existing systems.

Case Connection: EMITTER

Emitter case connection ensures better heat management, significantly improving reliability under high-load conditions.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLV945B attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Case Connection:

EMITTER

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

27 V

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

60 W

Minimum Power Gain (Gp):

8.5 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLV945B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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