Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLV945B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates at ultra-high frequencies, and offers a min power gain of 8.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.
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The durable ceramic and metal-sealed construction ensures effective heat dissipation and longevity, making the transistor reliable in demanding applications.
NPN configuration is widely used in amplifier applications, providing versatility and ease of integration with existing circuit designs.
The common emitter configuration offers excellent voltage and current gain, ideal for amplification tasks, which enhances performance in RF applications.
Designed specifically for amplification, this product excels in enhancing signal strength, making it perfect for RF applications.
Surface mount technology allows for compact design and ease of automated assembly, beneficial for modern high-density applications.
With a minimum gain of 8.5 dB, this transistor ensures robust performance in amplifying weak signals, crucial for RF systems.
The rectangular shape is conducive for efficient layout on PCBs, supporting space optimization in electronic designs.
The flat terminal design facilitates reliable soldering on PCB, ensuring strong electrical connections and reduced mechanical stress.
Capable of operating in the ultra-high frequency band, it is suitable for applications such as telecommunications and broadcasting.
The dual-element design increases reliability and provides enhanced performance characteristics in amplification scenarios.
Four terminals provide flexibility in circuit design, enabling various configurations and connections for optimal performance.
Flange mount style enhances ease of installation and provides a secure mounting solution, crucial for stability in RF applications.
A maximum power dissipation of 60 W allows for handling high power levels without overheating, ensuring reliability in demanding environments.
A minimum DC current gain of 30 ensures effective amplification, allowing efficient signal processing in various applications.
With a high maximum operating temperature, this transistor can function reliably in extreme environments, suitable for industrial applications.
Low collector-base capacitance minimizes signal distortion and enhances frequency performance, making it ideal for high-speed applications.
A maximum collector-emitter voltage of 27 V ensures compatibility with a wide range of circuits, enhancing versatility.
Silicon material provides excellent thermal stability and amplifying characteristics, a standard in high-performance electronic components.
A maximum collector current of 2 A enables this transistor to handle significant load currents, essential for robust circuit designs.
Dual terminal positioning supports versatile layout options and simplifies PCB design, making it easier to integrate into existing systems.
Emitter case connection ensures better heat management, significantly improving reliability under high-load conditions.
RF Power Bipolar Junction Transistors (BJT) BLV945B attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Minimum Power Gain (Gp):
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
BLV945B Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BSS138
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
BAT54SLT1G
Onsemi
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
BAV99
Transys Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
CRCW080510R0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
ULN2803A
Rochester Electronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
SS14
Goodwork Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Inchange Semiconductor
Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;
Sensitron Semiconductor
1N4148
Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
1N4148WS
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Semitron
RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
1N4148WT
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
Cheng-yi Electronic
2N7002
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
BLV2045
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 7 A; No. of Terminals: 2; Terminal Form: FLAT;
2SC2290
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 20 A;
BLV897
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Terminal Position: DUAL; Package Shape: RECTANGULAR;
RZ3135B28W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.8 A; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified;
SD4013
STMicroelectronics
SD4013 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and max power dissipation of 70W. Operating in the ultra-high frequency band, it has a max collector-emitter voltage of 30V. Ideal for applications requiring high-power amplification in RF circuits.
SP000748378
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; No. of Elements: 1;
BLW96
The NXP Semiconductors BLW96 is a single NPN RF Power BJT with 4 terminals, operating in the very high frequency band up to 245 MHz. It features a max power dissipation of 340 W and can handle a collector current of up to 12 A. Ideal for amplifier applications, this transistor has a collector-emitter voltage of 55 V and operates at temperatures up to 200°C.
ISL73096RHVX
Renesas Electronics
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Maximum Operating Temperature: 125 Cel;
PTB42001X
NPN; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: O-CRFM-F2;
MRF422
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Position: RADIAL; Highest Frequency Band: HIGH FREQUENCY BAND;
BLV21
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 1.75 A;
MRF1150MB
Motorola
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 583 W; Maximum Collector Current (IC): 12 A; No. of Terminals: 4;
PZ1721B12U
PZ1721B12U by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 27W, operates up to 200 °C, and offers a min power gain of 6.8 dB in the S band. Its ceramic, metal-sealed package ensures durability in demanding environments.
BFQ291
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): .25 A; Qualification: Not Qualified;
MRF426
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 3 A; Package Shape: ROUND;
LV2024E45RTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .0011 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL;
BFQ290
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 4 W; Maximum Collector Current (IC): .25 A;
SD1729(TH416)
SD1729(TH416) by STMicroelectronics is an NPN RF power BJT designed for high-frequency applications. It features a max collector current of 12 A, operates up to 200 °C, and supports voltages up to 35 V. Ideal for surface mount designs in communication systems.
BLY93A
BLY93A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3 A, operates up to 200 °C, and offers a min power gain of 9 dB in the very high frequency band. Its round, flat package ensures efficient thermal management.
2SC3147
Toshiba
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 14 A; Package Style (Meter): FLANGE MOUNT;
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BLV946
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 9 dB;
BLV92
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDFM-F6;
BLV909
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
BLV945A
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLV93
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): 1.6 A; Maximum Operating Temperature: 200 Cel;
BLV910
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL;
BLV947
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 1.65 A; Transistor Element Material: SILICON; Terminal Position: DUAL;
BLV904
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Collector-Emitter Voltage: 28 V;
BLV920
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 3 A; Minimum Power Gain (Gp): 10 dB;
BLV909-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Case Connection: ISOLATED;
BLV94
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 6; Transistor Application: AMPLIFIER;
BLV934
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Terminal Form: FLAT; Minimum Power Gain (Gp): 9 dB;
BLV91
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.5 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;
BLV904TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; No. of Terminals: 8; JESD-30 Code: R-CDSO-G8;
BLV91/SL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Minimum Power Gain (Gp): 6.5 dB;
BLV90
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLV904-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Qualification: Not Qualified; Minimum Power Gain (Gp): 11 dB;
BLV909T/R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
BLV935
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 4 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
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