Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLV945B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates at ultra-high frequencies, and offers a min power gain of 8.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.
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The durable ceramic and metal-sealed construction ensures effective heat dissipation and longevity, making the transistor reliable in demanding applications.
NPN configuration is widely used in amplifier applications, providing versatility and ease of integration with existing circuit designs.
The common emitter configuration offers excellent voltage and current gain, ideal for amplification tasks, which enhances performance in RF applications.
Designed specifically for amplification, this product excels in enhancing signal strength, making it perfect for RF applications.
Surface mount technology allows for compact design and ease of automated assembly, beneficial for modern high-density applications.
With a minimum gain of 8.5 dB, this transistor ensures robust performance in amplifying weak signals, crucial for RF systems.
The rectangular shape is conducive for efficient layout on PCBs, supporting space optimization in electronic designs.
The flat terminal design facilitates reliable soldering on PCB, ensuring strong electrical connections and reduced mechanical stress.
Capable of operating in the ultra-high frequency band, it is suitable for applications such as telecommunications and broadcasting.
The dual-element design increases reliability and provides enhanced performance characteristics in amplification scenarios.
Four terminals provide flexibility in circuit design, enabling various configurations and connections for optimal performance.
Flange mount style enhances ease of installation and provides a secure mounting solution, crucial for stability in RF applications.
A maximum power dissipation of 60 W allows for handling high power levels without overheating, ensuring reliability in demanding environments.
A minimum DC current gain of 30 ensures effective amplification, allowing efficient signal processing in various applications.
With a high maximum operating temperature, this transistor can function reliably in extreme environments, suitable for industrial applications.
Low collector-base capacitance minimizes signal distortion and enhances frequency performance, making it ideal for high-speed applications.
A maximum collector-emitter voltage of 27 V ensures compatibility with a wide range of circuits, enhancing versatility.
Silicon material provides excellent thermal stability and amplifying characteristics, a standard in high-performance electronic components.
A maximum collector current of 2 A enables this transistor to handle significant load currents, essential for robust circuit designs.
Dual terminal positioning supports versatile layout options and simplifies PCB design, making it easier to integrate into existing systems.
Emitter case connection ensures better heat management, significantly improving reliability under high-load conditions.
RF Power Bipolar Junction Transistors (BJT) BLV945B attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Minimum Power Gain (Gp):
Qualification:
Surface Mount:
Terminal Form:
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Transistor Application:
Transistor Element Material:
BLV945B Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
1N4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
2N2222A
Telcom Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MBR0520LT3G
Onsemi
MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
BAV99
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .1 A;
SS14
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Littelfuse
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Microsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
OPA2227UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM317LMX/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Seated Height: 1.75 mm; Nominal Dropout Voltage-1: 3 V;
LM7805CT
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
American Power Devices
BAV99LT1G
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
08055C104KAT2A
KYOCERA AVX
08055C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
RC0805FR-0710KL
Yageo
Yageo's RC0805FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. Ideal for applications requiring resistance to operate b/w -55°C to 155°C, such as in automotive electronics or industrial control systems. Features metal glaze/thick film technology and matte tin finish with nickel barrier.
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
1N4148WS
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2SC2639
Toshiba
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 3.5 A; Maximum Operating Temperature: 175 Cel;
SD1731
STMicroelectronics
SD1731 by STMicroelectronics is a NPN RF Power BJT with 4 terminals, capable of handling up to 233W power dissipation. It operates in the high-frequency band, with a max collector current of 20A and max temp of 200 °C. Ideal for applications requiring high-power amplification in RF circuits.
BLV958FL-T
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
AM83135-001
STMicroelectronics' AM83135-001 is an NPN RF BJT with a single configuration for switching applications. It offers a min power gain of 5.2 dB, min DC current gain of 10, and can handle a max collector current of 0.45 A. Ideal for S Band frequencies, this transistor comes in a ceramic-metal-sealed co-fired package suitable for flange mount installations at temperatures up to 250 °C.
MRF422
Tyco Electronics M/a-com
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Terminal Form: FLAT; Qualification: Not Qualified;
LLE18300X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR;
SD1730
SD1730 by STMicroelectronics is a NPN RF Power BJT with 320W power dissipation, 35V max collector-emitter voltage, and 16A max collector current. It operates in the very high frequency band and is ideal for applications requiring high-power amplification in radio frequency circuits.
PTB23006U
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): .75 A; Transistor Application: AMPLIFIER;
BLV2042-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; No. of Terminals: 8; Transistor Element Material: SILICON;
SD1528-08
SD1528-08 by STMicroelectronics is an NPN BJT for L Band applications. With 87.5W power dissipation, it operates at 200 °C max temperature and handles 65V collector-emitter voltage. Ideal for switching tasks, this transistor has a single configuration in a square package with flange mount style.
MX0912B100Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 20 V;
BLV33F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 750 MHz; Maximum Power Dissipation (Abs): 133 W; Maximum Collector Current (IC): 12.5 A;
BLV36
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): 8.5 A; Maximum Collector-Emitter Voltage: 33 V;
BLU30/28
BLU30/28 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 8 dB, operates at ultra-high frequencies, and supports up to 4 A collector current. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
2N3927
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 200 Cel;
2N6080
New Jersey Semiconductor Products
NPN; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 18 V; No. of Elements: 1;
BFQ291
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): .25 A; Qualification: Not Qualified;
RZ3135B28W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.8 A; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified;
BLX98
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT;
BLT93/SL
BLT93/SL from NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 1.2 A, operates at ultra-high frequencies, and withstands temperatures up to 200 °C. Its ceramic-metal sealed package ensures durability in demanding environments.
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BLV946
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 9 dB;
BLV92
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDFM-F6;
BLV909
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
BLV945A
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLV93
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): 1.6 A; Maximum Operating Temperature: 200 Cel;
BLV910
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL;
BLV947
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 1.65 A; Transistor Element Material: SILICON; Terminal Position: DUAL;
BLV904
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Collector-Emitter Voltage: 28 V;
BLV920
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 3 A; Minimum Power Gain (Gp): 10 dB;
BLV909-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Case Connection: ISOLATED;
BLV94
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 6; Transistor Application: AMPLIFIER;
BLV934
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Terminal Form: FLAT; Minimum Power Gain (Gp): 9 dB;
BLV91
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.5 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;
BLV904TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; No. of Terminals: 8; JESD-30 Code: R-CDSO-G8;
BLV91/SL
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Minimum Power Gain (Gp): 6.5 dB;
BLV90
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLV904-T
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Qualification: Not Qualified; Minimum Power Gain (Gp): 11 dB;
BLV909T/R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
BLV935
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 4 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
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