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AM1517-025M

STMicroelectronics

AM1517-025M by STMicroelectronics

AM1517-025M by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 2.5 A, operates in the L band, and comes in a square ceramic package with flat terminals. Ideal for surface mount designs, it ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,762 parts In-Stock

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3,762

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Anansix

USA . 2,814 parts In-Stock

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2,814

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Vyrian

USA . 123 parts In-Stock

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123

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 136 parts In-Stock

1+ parts

$0.063

100+ parts

-

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-

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$0.060

136

$0.063

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-

$0.060

Northwest PG Solutions

USA . 2,158 parts In-Stock

1+ parts

$0.069

100+ parts

-

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-

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$0.061

2,158

$0.069

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$0.061

IDEA Electronic Components Group

UK . 591 parts In-Stock

1+ parts

$0.770

100+ parts

-

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$0.693

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591

$0.770

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$0.693

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MKK Technologies

India . 671 parts In-Stock

1+ parts

$1.448

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671

$1.448

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DigiPath Technology Company

USA . 671 parts In-Stock

1+ parts

$1.448

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671

$1.448

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Parana Technologies

USA . 2,066 parts In-Stock

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$0.921

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2,066

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$0.921

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Corphita

USA . 131 parts In-Stock

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131

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Overview

Unlock exceptional performance with the AM1517-025M from STMicroelectronics, a leader in semiconductor innovation. This premium RF Power BJT excels in amplification applications, making it ideal for high-frequency systems. Engineered with reliability in mind, its robust ceramic and metal-sealed design ensures durability and consistent operation. Elevate your projects with this cutting-edge component that delivers superior efficiency and value, perfect for both industrial and consumer electronics.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The durable ceramic and metal-sealed co-fired package provides excellent thermal management and reliability, making it suitable for demanding applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient signal amplification, making it a preferred choice for various RF amplifier applications.

Configuration: SINGLE

A single transistor design simplifies the circuit, reduces potential points of failure, and can contribute to cost-effective designs.

Transistor Application: AMPLIFIER

Optimized for amplifier applications, ensuring high performance in signal boosting and greater overall efficiency.

Surface Mount: YES

Surface mount technology facilitates compact PCB designs, enabling higher density layouts and improved soldering reliability.

Package Shape: SQUARE

The square shape aids in stable mounting and efficient thermal performance due to a larger surface area for heat dissipation.

Terminal Form: FLAT

Flat terminals provide an ideal surface for soldering, ensuring strong electrical connections and reducing the risk of mechanical failure.

Highest Frequency Band: L BAND

Designed for L band frequencies, making this transistor suitable for application in communication systems and radar functionalities.

No. of Terminals: 2

Having only two terminals simplifies the design and assembly process while ensuring straightforward integration into circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging allows for secure mechanical attachment, providing stability in high-vibration environments.

Transistor Element Material: SILICON

Silicon offers excellent electronic properties and is widely used in transistors due to its effectiveness in medium-power applications.

Maximum Collector Current (IC): 2.5 A

With a maximum collector current of 2.5 A, this transistor can handle substantial power, making it versatile for a variety of applications.

Terminal Position: DUAL

Dual terminal positioning enhances flexibility in circuit designs, allowing for more versatile applications in layouts.

Case Connection: BASE

The base connection ensures optimal performance and control, providing effective signal handling and amplification.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM1517-025M attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

S-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

AM1517-025M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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