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AM1517-025S

STMicroelectronics

AM1517-025S by STMicroelectronics

AM1517-025S by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 2.5 A, operates in the L band, and comes in a square ceramic package with flat terminals. Ideal for high-frequency amplification needs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,406 parts In-Stock

1+ parts

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2,406

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Anansix

USA . 1,722 parts In-Stock

1+ parts

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1,722

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Digiode

USA . 1,390 parts In-Stock

1+ parts

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1,390

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 861 parts In-Stock

1+ parts

$0.303

100+ parts

-

1k+ parts

-

10k+ parts

$0.291

861

$0.303

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-

$0.291

Northwest PG Solutions

USA . 781 parts In-Stock

1+ parts

$0.333

100+ parts

-

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-

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$0.294

781

$0.333

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-

$0.294

IDEA Electronic Components Group

UK . 1,630 parts In-Stock

1+ parts

$1.530

100+ parts

-

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$1.377

10k+ parts

-

1,630

$1.530

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$1.377

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MKK Technologies

India . 1,754 parts In-Stock

1+ parts

$2.877

100+ parts

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1,754

$2.877

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DigiPath Technology Company

USA . 1,754 parts In-Stock

1+ parts

$2.877

100+ parts

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1,754

$2.877

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Corphita

USA . 2,713 parts In-Stock

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2,713

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Parana Technologies

USA . 2,006 parts In-Stock

1+ parts

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100+ parts

$1.829

1k+ parts

-

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2,006

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$1.829

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Overview

Unlock your project's potential with the AM1517-025S from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance RF Power BJT combines exceptional quality and reliability, ensuring outstanding amplification for your applications. Designed for seamless surface mounting and robust operation, it excels in critical environments while delivering 2.5 A of collector current. Elevate your designs with superior efficiency and performance—choose AM1517-025S for unparalleled value!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The high-quality ceramic and metal-sealed material enhances thermal performance and reliability, making this transistor suitable for demanding applications.

Polarity or Channel Type: NPN

NPN transistors are widely used for amplification and switching applications, providing versatility in circuit designs.

Configuration: SINGLE

A single configuration simplifies integration into circuits, ensuring ease of use and compact design.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor can deliver high gain and low distortion in audio or RF circuits.

Surface Mount: YES

Surface mount technology allows for smaller and lighter circuit designs, enhancing the efficiency and space utilization of electronic devices.

Package Shape: SQUARE

The square package facilitates easy mounting and optimal usage of board space, resulting in better layout designs.

Terminal Form: FLAT

Flat terminals provide stable and reliable connections, which improve overall circuit performance.

Highest Frequency Band: L BAND

Capability to operate in the L band enables it to be an ideal choice for various communication and radar applications.

No. of Terminals: 2

With only two terminals, this transistor simplifies connections and reduces potential points of failure in the circuitry.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging allows for secure installation and easy heat dissipation in high-power applications.

Transistor Element Material: SILICON

Silicon is a standard for bipolar junction transistors, offering good performance in terms of efficiency and heat management.

Maximum Collector Current (IC): 2.5 A

The ability to handle a maximum collector current of 2.5 A makes this transistor suitable for high-power applications.

Terminal Position: DUAL

Dual terminal positioning aids in stable mounting and provides better circuit integration options.

Case Connection: BASE

Base case connection enhances the transistor's performance and simplifies design in circuit configurations.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM1517-025S attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

S-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

AM1517-025S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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