Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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LWE2025R by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 8W, operates up to 200 °C, and offers a min gain of 7 dB in the S band. Its ceramic, metal-sealed package ensures durability in demanding environments.
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The use of ceramic and metal-sealed materials provides robust durability and reliability, making it suitable for demanding environments.
The NPN configuration is commonly used in amplifier applications, offering good performance for signal amplification.
A single transistor design simplifies integration into circuits and reduces space requirements on the PCB.
Designed specifically for amplifying signals, this transistor is ideal for audio, RF, and other high-frequency applications.
Surface mount capability allows for easier automated assembly processes and reduces the overall footprint on the circuit board.
With a minimum power gain of 7 dB, this transistor ensures efficient amplification, making it suitable for high-performance applications.
The round package shape can provide easier handling and placement in certain configurations, enhancing design flexibility.
Flat terminals offer better contact and can enhance heat dissipation when soldered to a PCB, improving overall reliability.
Operating within the S band, this transistor is well-suited for RF applications, including communication and radar systems.
A 2-terminal design promotes simplicity in circuit designs, allowing for straightforward integration and reduced complexity.
With a maximum power dissipation of 8 W, this transistor can handle significant power without overheating, ensuring reliability under load.
The disk button style is compact and efficient, making it suitable for various applications while maintaining thermal performance.
This specification indicates that the transistor can safely operate in ambient conditions without exceeding its power limits, enhancing safety.
An operating temperature of up to 200 °C ensures this transistor can function effectively in high-heat environments, reducing the risk of failure.
With a maximum collector-emitter voltage of 16 V, this transistor is capable of operating in low-voltage applications, suitable for various devices.
Silicon is a standard material for BJTs, providing efficient performance and reliable characteristics essential for signal amplification.
The ability to handle a maximum collector current of 0.8 A enables the transistor to support high-power applications efficiently.
Radial terminal positioning allows for easy mounting and soldering, which can simplify assembly and reduce manufacturing complexity.
Emitter case connection facilitates improved thermal management and enhances performance in amplifier applications.
RF Power Bipolar Junction Transistors (BJT) LWE2025R attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
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LWE2025R Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BAV99
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN-2803A
Sprague Electric
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;
SMBJ18CA
Uniohm
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20U
Maxim Integrated
DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
1N4148WT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
BSS138DW-7-F
Diodes Incorporated
BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
1N4148
Shenzhen Yixinsemi Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SS14
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
LM317BD2TG
Onsemi
LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.
Philips Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LL4148
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Swampscott Electronics
1554216004
Molex
WIRE AND CABLE;
2N7002
Continental Device India
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
ERJU06F10R0V
Panasonic
ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.
1N4148WS
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Souriau
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
MSC81250M
STMicroelectronics
STMicroelectronics' MSC81250M is a NPN RF BJT transistor with 600W power dissipation, ideal for L Band switching applications. Featuring a single configuration, it has a max collector current of 17.8A and operates at up to 200 °C temperature.
LV1721E50R
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;
MRF422
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 35 V;
MSC81058
STMicroelectronics' MSC81058 is a NPN RF BJT with 29W power dissipation, ideal for L Band applications. Featuring single configuration, it has 1A max collector current and 10pF collector-base capacitance. Suitable for amplifier circuits, this transistor operates up to 200 °C in a ceramic-metal package.
SD1542-04
SD1542-04 by STMicroelectronics is a NPN RF Power BJT with 1350W power dissipation, 40A collector current, and L Band frequency. It is used in high-power applications requiring a single configuration for base connection, featuring a ceramic-metal package suitable for surface mount installations.
LWE2015RTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .25 A; JESD-30 Code: O-CRDB-F2; Qualification: Not Qualified;
2SC1955
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3; Terminal Form: WIRE;
LXE18400XTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Highest Frequency Band: L BAND; No. of Terminals: 2;
LLE16120X
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 200 Cel;
SD1528-08
SD1528-08 by STMicroelectronics is an NPN BJT for L Band applications. With 87.5W power dissipation, it operates at 200 °C max temperature and handles 65V collector-emitter voltage. Ideal for switching tasks, this transistor has a single configuration in a square package with flange mount style.
BLP25M710
RF Power Bipolar Transistors;
BLY93A
BLY93A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3 A, operates up to 200 °C, and offers a min power gain of 9 dB in the very high frequency band. Its round, flat package ensures efficient thermal management.
MZ0912B50Y,114
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS; Package Style (Meter): FLANGE MOUNT;
BLW79
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .5 A; Minimum Power Gain (Gp): 9 dB;
SD1542
SD1542 by STMicroelectronics is a NPN RF BJT with 1300W power dissipation, suitable for L Band applications. Featuring a max collector current of 40A and operating temperature of 175 °C, it is designed for high-power RF amplification in various systems. This single configuration transistor has a ceramic-metal-sealed co-fired package ideal for surface mount installations.
MRF1150MB
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 583 W; Maximum Collector Current (IC): 12 A; No. of Terminals: 4;
BLS3135-50,114
NPN; Configuration: SINGLE; Surface Mount: YES; Case Connection: BASE; Maximum Operating Temperature: 200 Cel; No. of Terminals: 2;
LLE18150X
LLE18150X by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 25W, operates up to 200 °C, and offers a min power gain of 7.8 dB in the L band. Its flat terminal design allows for easy surface mounting.
BLV32F
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2000 MHz; Maximum Collector Current (IC): 4 A; Transistor Element Material: SILICON;
2SC2783
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 8 A; JESD-30 Code: O-CXFM-F6;
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LWE2010S
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
LWE2010STRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .11 A; Package Shape: ROUND; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
LWE2015R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .45 A; JESD-30 Code: O-CRDB-F2; Case Connection: EMITTER;
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