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LWE2025R

NXP Semiconductors

LWE2025R by NXP Semiconductors

LWE2025R by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 8W, operates up to 200 °C, and offers a min gain of 7 dB in the S band. Its ceramic, metal-sealed package ensures durability in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,816 parts In-Stock

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Digiode

USA . 1,467 parts In-Stock

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Vyrian

USA . 1,360 parts In-Stock

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One Stop Electronics

USA . 778 parts In-Stock

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$17.050

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778

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UNI Independent Distributors

Spain . 5,179 parts In-Stock

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Corphita

USA . 3,006 parts In-Stock

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Overview

Unlock exceptional performance with the LWE2025R from NXP Semiconductors, a leader in cutting-edge technology. This RF Power BJT delivers unparalleled quality and reliability, ideal for amplifying your signals in critical applications. With its robust ceramic-metal construction and impressive power gain, the LWE2025R ensures superior efficiency and longevity. Elevate your projects with a trusted component that enhances connectivity and drives innovation forward!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed materials provides robust durability and reliability, making it suitable for demanding environments.

Polarity or Channel Type: NPN

The NPN configuration is commonly used in amplifier applications, offering good performance for signal amplification.

Configuration: SINGLE

A single transistor design simplifies integration into circuits and reduces space requirements on the PCB.

Transistor Application: AMPLIFIER

Designed specifically for amplifying signals, this transistor is ideal for audio, RF, and other high-frequency applications.

Surface Mount: YES

Surface mount capability allows for easier automated assembly processes and reduces the overall footprint on the circuit board.

Minimum Power Gain (Gp): 7 dB

With a minimum power gain of 7 dB, this transistor ensures efficient amplification, making it suitable for high-performance applications.

Package Shape: ROUND

The round package shape can provide easier handling and placement in certain configurations, enhancing design flexibility.

Terminal Form: FLAT

Flat terminals offer better contact and can enhance heat dissipation when soldered to a PCB, improving overall reliability.

Highest Frequency Band: S BAND

Operating within the S band, this transistor is well-suited for RF applications, including communication and radar systems.

No. of Terminals: 2

A 2-terminal design promotes simplicity in circuit designs, allowing for straightforward integration and reduced complexity.

Maximum Power Dissipation (Abs): 8 W

With a maximum power dissipation of 8 W, this transistor can handle significant power without overheating, ensuring reliability under load.

Package Style (Meter): DISK BUTTON

The disk button style is compact and efficient, making it suitable for various applications while maintaining thermal performance.

Maximum Power Dissipation Ambient: 8 W

This specification indicates that the transistor can safely operate in ambient conditions without exceeding its power limits, enhancing safety.

Maximum Operating Temperature: 200 °C

An operating temperature of up to 200 °C ensures this transistor can function effectively in high-heat environments, reducing the risk of failure.

Maximum Collector-Emitter Voltage: 16 V

With a maximum collector-emitter voltage of 16 V, this transistor is capable of operating in low-voltage applications, suitable for various devices.

Transistor Element Material: SILICON

Silicon is a standard material for BJTs, providing efficient performance and reliable characteristics essential for signal amplification.

Maximum Collector Current (IC): 0.8 A

The ability to handle a maximum collector current of 0.8 A enables the transistor to support high-power applications efficiently.

Terminal Position: RADIAL

Radial terminal positioning allows for easy mounting and soldering, which can simplify assembly and reduce manufacturing complexity.

Case Connection: EMITTER

Emitter case connection facilitates improved thermal management and enhances performance in amplifier applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) LWE2025R attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Highest Frequency Band:

S BAND

JESD-30 Code:

O-CRDB-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

8 W

Maximum Power Dissipation (Abs):

8 W

Minimum Power Gain (Gp):

7 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

LWE2025R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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