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STMicroelectronics RF Power Bipolar Junction Transistors (BJT) 1

RF Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
SD1275-01 by STMicroelectronics

SD1275-01

STMicroelectronics

STMicroelectronics' SD1275-01 is a NPN RF BJT with 70W power dissipation, 160MHz fT, and 8A IC. Ideal for amplifier applications in the VHF band due to its high collector-emitter voltage of 16V and very high frequency band capability. Package style is flange mount with a round shape and flat terminals.

8 A

16 V

SINGLE

20

VERY HIGH FREQUENCY BAND

O-PRFM-F4

1

4

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

NPN

70 W

Not Qualified

Other Transistors

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

160 MHz