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PTB42002X

NXP Semiconductors

PTB42002X by NXP Semiconductors

PTB42002X by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 10W, operates in the C band, and supports a max temp of 200 °C. Its ceramic-metal sealed package ensures durability in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,635 parts In-Stock

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4,635

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Digiode

USA . 3,976 parts In-Stock

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3,976

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Anansix

USA . 1,702 parts In-Stock

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1,702

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 197 parts In-Stock

1+ parts

$13.050

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197

$13.050

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Corphita

USA . 2,378 parts In-Stock

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2,378

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UNI Independent Distributors

Spain . 1,537 parts In-Stock

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1,537

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Overview

Unlock superior performance with the PTB42002X from NXP Semiconductors, a leader in innovative semiconductor solutions. This RF Power BJT combines exceptional quality and reliability, ideal for amplifier applications across various industries. Its robust design ensures stability under high temperatures, delivering consistent power gain. Elevate your projects with this versatile component, designed to maximize efficiency and enhance product longevity, empowering you to meet demanding market needs effortlessly.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed materials enhances durability and thermal performance, making this product suitable for high-temperature applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes, offering versatility in numerous electronic applications.

Configuration: SINGLE

A single configuration simplifies the design and integration into circuits, allowing for easier implementation in compact systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is ideal for use in audio, RF, and communication systems.

Surface Mount: YES

Surface mount capability allows for more compact PCB designs and improved assembly efficiency, making this product suitable for modern electronics.

Minimum Power Gain (Gp): 5 dB

A minimum power gain of 5 dB ensures effective amplification, providing ample gain for various electronic applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layout on PCBs, aiding in space management and thermal dissipation.

Terminal Form: FLAT

Flat terminals ensure better contact and stability during soldering, which is critical for performance and reliability in circuit applications.

Highest Frequency Band: C BAND

Operating in the C band makes this transistor suitable for telecommunications, radar, and satellite applications, enhancing its versatility.

No. of Terminals: 2

With only two terminals, this transistor is simple to integrate and use in various circuit designs, making it user-friendly.

Maximum Power Dissipation (Abs): 10 W

A maximum power dissipation of 10 W indicates robust performance, allowing it to handle substantial power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure installation and excellent thermal conduction, essential for optimal performance in power applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this product is suitable for high-temperature environments, ensuring reliability in demanding conditions.

Maximum Collector-Emitter Voltage: 15 V

A collector-emitter voltage rating of 15 V allows for flexibility in various circuit designs while ensuring safe operation within specified limits.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical characteristics and thermal stability, which is a standard for RF applications.

Maximum Collector Current (IC): 0.5 A

A collector current rating of 0.5 A makes this transistor suitable for medium-power applications while maintaining efficiency.

Terminal Position: DUAL

Dual terminal position enhances flexibility in PCB design, supporting various configurations and layouts as per design requirements.

Case Connection: BASE

Base case connection design aids in straightforward integration and improves the overall performance in amplifier setups.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) PTB42002X attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

5 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PTB42002X Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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