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PTB42003X

NXP Semiconductors

PTB42003X by NXP Semiconductors

PTB42003X by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 14W, operates in the C band, and supports surface mount with a flat terminal design. Ideal for high-frequency amplification in compact systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,456 parts In-Stock

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3,456

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Vyrian

USA . 2,147 parts In-Stock

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2,147

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Anansix

USA . 1,939 parts In-Stock

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1,939

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,276 parts In-Stock

1+ parts

$50.050

100+ parts

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1,276

$50.050

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Corphita

USA . 2,688 parts In-Stock

1+ parts

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2,688

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UNI Independent Distributors

Spain . 305 parts In-Stock

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305

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Overview

Elevate your projects with the PTB42003X from NXP Semiconductors, a leader in innovation and quality. This robust RF Power Bipolar Junction Transistor delivers exceptional performance in amplifier applications, ensuring reliable signal amplification for various systems. Designed with precision, its durable ceramic and metal-sealed package guarantees long-lasting operation even in demanding conditions. Experience enhanced power efficiency and reliability, making it an invaluable component for your next breakthrough design!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This durable material enhances the reliability and longevity of the transistor, making it suitable for demanding applications.

Polarity or Channel Type: NPN

The NPN configuration is well-suited for a variety of applications, offering good performance in amplifying tasks.

Configuration: SINGLE

A single configuration simplifies the design and integration process in electronic circuits.

Transistor Application: AMPLIFIER

Optimized for amplification, this transistor is ideal for audio and radio frequency applications.

Surface Mount: YES

Surface mount capability allows for compact circuit designs, contributing to reduced PCB sizes.

Minimum Power Gain (Gp): 5 dB

This minimum gain ensures sufficient amplification, making it effective for various RF applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy mounting and integration into standard PCB layouts.

Terminal Form: FLAT

Flat terminals offer better contact and easier soldering, enhancing assembly efficiency.

Highest Frequency Band: C BAND

Suitable for C band applications, this product is ideal for satellite communications and radar systems.

No. of Terminals: 2

Minimal terminal count simplifies circuit design while ensuring necessary connections are maintained.

Maximum Power Dissipation (Abs): 14 W

High power dissipation capability allows for more robust performance under demanding operating conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure attachment options, improving stability in various applications.

Maximum Operating Temperature: 200 °C

High operational temperature range enables use in harsh environments without compromising performance.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and performance, crucial for RF applications.

Maximum Collector Current (IC): 0.75 A

Adequate collector current facilitates compatibility with various power levels in RF circuit designs.

Terminal Position: DUAL

Dual terminal positions improve flexibility in layout design, accommodating different circuit configurations.

Case Connection: BASE

Base connection allows for efficient circuit integration, optimizing signal flow and performance.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) PTB42003X attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Highest Frequency Band:

C BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

5 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PTB42003X Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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