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SD1528-08

STMicroelectronics

SD1528-08 by STMicroelectronics

SD1528-08 by STMicroelectronics is an NPN BJT for L Band applications. With 87.5W power dissipation, it operates at 200 °C max temperature and handles 65V collector-emitter voltage. Ideal for switching tasks, this transistor has a single configuration in a square package with flange mount style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,195 parts In-Stock

1+ parts

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4,195

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-

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Digiode

USA . 3,199 parts In-Stock

1+ parts

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-

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3,199

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Anansix

USA . 1,288 parts In-Stock

1+ parts

-

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1,288

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Speed Components Ltd

Israel . 240 parts In-Stock

1+ parts

-

100+ parts

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240

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M&R Communications

USA . 1 parts In-Stock

1+ parts

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,515 parts In-Stock

1+ parts

$0.442

100+ parts

-

1k+ parts

$0.397

10k+ parts

-

1,515

$0.442

-

$0.397

-

MKK Technologies

India . 2,259 parts In-Stock

1+ parts

$0.830

100+ parts

-

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2,259

$0.830

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-

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DigiPath Technology Company

USA . 2,259 parts In-Stock

1+ parts

$0.830

100+ parts

-

1k+ parts

-

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2,259

$0.830

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-

-

Corphita

USA . 3,654 parts In-Stock

1+ parts

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3,654

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Parana Technologies

USA . 960 parts In-Stock

1+ parts

-

100+ parts

$0.528

1k+ parts

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960

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$0.528

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Overview

Unlock the power of reliable RF switching with the SD1528-08 by STMicroelectronics. Crafted with precision and expertise, this NPN transistor offers unparalleled performance in L Band applications. With a maximum power dissipation of 87.5W and a collector-emitter voltage of 65V, this transistor is designed to handle high-power demands with ease. Whether you're looking to optimize your communication systems or enhance industrial automation, the SD1528-08 delivers the value, reliability, and quality that STMicroelectronics is renowned for. Elevate your projects to new heights with the SD1528-08.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent durability and reliability, making this transistor suitable for various challenging environments.

Polarity or Channel Type: NPN

The NPN configuration allows for high efficiency and performance in switching applications, making this transistor a reliable choice for such tasks.

Configuration: SINGLE

The single configuration simplifies circuit design and enhances ease of use, making this transistor ideal for applications where simplicity is key.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers fast and reliable performance in on/off switching scenarios.

Surface Mount: YES

With surface-mount capability, this transistor can be easily integrated into compact electronic circuits, saving space and simplifying assembly.

Package Shape: SQUARE

The square package shape provides stability and ease of mounting, ensuring secure installation in electronic devices.

Terminal Form: FLAT

The flat terminal form facilitates efficient soldering and connection, enhancing the overall reliability of the transistor in various applications.

Highest Frequency Band: L BAND

Operating in the L band frequency range, this transistor is suitable for high-frequency applications, ensuring reliable performance in demanding frequency environments.

No. of Terminals: 2

With a small number of terminals, this transistor offers simplified circuit connections, making it easier to integrate into electronic systems.

Maximum Power Dissipation (Abs): 87.5 W

With a high maximum power dissipation rating, this transistor can handle significant power levels, making it suitable for demanding applications requiring high power handling capabilities.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and stable mounting in electronic systems, ensuring proper heat dissipation and overall reliability.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 65 V

The high maximum collector-emitter voltage rating ensures reliable operation in applications with varying voltage levels, providing added versatility and robustness.

Transistor Element Material: SILICON

Constructed with silicon material, this transistor offers excellent performance characteristics, including high efficiency and reliability, making it a durable choice for various applications.

Maximum Collector Current (IC): 1.5 A

With a high maximum collector current rating, this transistor can handle significant current levels, ensuring reliable performance in applications requiring high current capabilities.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit connections, allowing for versatile integration into electronic systems with varying design requirements.

Case Connection: BASE

The base case connection simplifies the transistor's installation and circuit design, ensuring ease of use and reliability in various electronic applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1528-08 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

WITH EMITTER BALLASTING RESISTORS

Case Connection:

BASE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

S-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

SQUARE

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SD1528-08 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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