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AM1214-300

STMicroelectronics

AM1214-300 by STMicroelectronics

STMicroelectronics' AM1214-300 is an NPN RF BJT with 6.3 dB min power gain, ideal for L Band applications. It has a max power dissipation of 730W and can handle up to 18.75A collector current. Suitable for switching purposes, this transistor operates at temperatures up to 250 °C in a ceramic-metal-sealed co-fired package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,228 parts In-Stock

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Anansix

USA . 1,316 parts In-Stock

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1,316

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Vyrian

USA . 543 parts In-Stock

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543

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 750 parts In-Stock

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$0.810

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$0.729

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750

$0.810

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$0.729

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MKK Technologies

India . 787 parts In-Stock

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$1.522

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787

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DigiPath Technology Company

USA . 787 parts In-Stock

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$1.522

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787

$1.522

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Corphita

USA . 4,907 parts In-Stock

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Parana Technologies

USA . 1,258 parts In-Stock

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$0.968

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1,258

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$0.968

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Northwest PG Solutions

USA . 807 parts In-Stock

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Native Components

USA . 692 parts In-Stock

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Overview

Looking for a reliable RF power transistor? Look no further than the AM1214-300 by STMicroelectronics. With a reputation for high-quality components, STMicroelectronics delivers top-notch performance in the category of RF Power Bipolar Junction Transistors (BJT). This transistor offers a multitude of applications, including switching, making it versatile for various projects. Customers can trust in the value, benefits, and advantages that this product brings to the table. Don't settle for anything less than excellence with the AM1214-300.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and high reliability, making the transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, offering good performance and efficiency.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, making it easier to integrate into systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in electronic systems.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space in electronic devices.

Minimum Power Gain (Gp): 6.3 dB

The minimum power gain ensures efficient signal amplification, improving overall performance of the transistor.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy integration into various electronic systems.

Terminal Form: FLAT

Flat terminals provide secure and stable connections, ensuring reliable operation in high power environments.

Highest Frequency Band: L BAND

Designed for use in the L band, suitable for applications requiring high frequency operation and performance.

No. of Terminals: 2

Simple 2-terminal design for easy integration into circuitry and connections, reducing complexity in system design.

Maximum Power Dissipation (Abs): 730 W

High power dissipation capability allows the transistor to handle large amounts of power, ideal for high power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables secure mounting and heat dissipation, ensuring reliable operation in demanding environments.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain of 10 ensures stable and consistent amplification of input signals, improving overall performance.

Maximum Operating Temperature: 250 °C

Capable of operating at high temperatures of up to 250 °C, suitable for use in challenging environments with elevated temperatures.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring consistent operation in electronic systems.

Maximum Collector Current (IC): 18.75 A

High maximum collector current capacity allows the transistor to handle large current loads, suitable for high power applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and connections, allowing for easy integration into various systems.

Case Connection: BASE

Base case connection offers secure grounding and thermal management, ensuring stable operation in high power environments.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM1214-300 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

6.3 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM1214-300 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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