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2SC3952D

Onsemi

2SC3952D by Onsemi

Onsemi's 2SC3952D is an NPN RF Power BJT with a max VCE of 70V and IC of 0.5A. Ideal for switching applications, it has fT of 700MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for flange mount style.

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Vyrian

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Digiode

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QUARKTWIN TECHNOLOGY LTD

USA . 24,096 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 5,834 parts In-Stock

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SupplyDigital Components

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CPlus Electronics

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Kulean Microsystems

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Corphita

USA . 1,700 parts In-Stock

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Northwest PG Solutions

USA . 611 parts In-Stock

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Native Components

USA . 575 parts In-Stock

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Corohmni

South Africa . 450 parts In-Stock

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UHIMA Technologies

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Overview

Elevate your RF power switching capabilities with the 2SC3952D by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliable performance. The 2SC3952D is perfect for a wide range of applications, offering customers unmatched value and benefits. With its superior design and advanced features, this NPN transistor provides high collector-emitter voltage and current capabilities, making it ideal for various switching tasks. Upgrade your electronic projects today with the 2SC3952D and experience the difference Onsemi technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching circuits, offering high efficiency and performance.

Configuration: SINGLE

Simplified design and easier integration into circuits, ideal for basic switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and reliability in such tasks.

Package Shape: RECTANGULAR

Compact and space-saving design, allowing for efficient placement on circuit boards.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and robust mechanical connections, suitable for through-hole mounting.

No. of Terminals: 3

Simplified connection setup and compatibility with standard circuit configurations.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation, crucial for maintaining optimal performance.

Maximum Collector-Emitter Voltage: 70 V

Allows for higher voltage applications while ensuring safety and stability within the specified limits.

Transistor Element Material: SILICON

Silicon offers excellent electrical properties, ensuring reliability and performance in various operating conditions.

Maximum Collector Current (IC): 0.5 A

Sufficient current handling capacity for low to medium power switching requirements.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Provides a durable and corrosion-resistant finish for reliable connectivity and performance over time.

Nominal Transition Frequency (fT): 700 MHz

High transition frequency enables fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SC3952D attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

70 V

Configuration:

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC3952D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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