Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLV37 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 290W, operates at very high frequencies, and offers a min power gain of 10.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.
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The ceramic and metal-sealed co-fired package ensures high durability and resistance to environmental factors, making the transistor suitable for demanding applications.
NPN configuration allows for easier integration into common amplifier circuits, enabling efficient signal amplification.
The common emitter configuration is widely used in amplifier designs, providing high gain and flexibility in applications.
Designed specifically for amplifier applications, ensuring optimal performance in relevant circuits.
Surface mount capability facilitates compact designs and easy integration into modern electronic circuits.
A minimum power gain of 10.5 dB signifies effective amplification, making this transistor suitable for both low and high gain requirements.
The rectangular shape allows for efficient space utilization on printed circuit boards (PCBs).
Flat terminals enhance contact reliability and ease of mounting, ensuring stable connections.
Support for very high frequency operations makes this transistor ideal for RF applications, including telecommunications.
Having two elements allows for greater versatility and improved performance in amplification and switching applications.
Five terminals provide flexibility for various circuit configurations and improved connectivity.
Flange mount design simplifies physical placement in equipment, helping with thermal management and stability.
A high power dissipation rating allows for robust performance under intense conditions without overheating.
A minimum hFE of 15 indicates reliable gain for small signal amplification, enhancing circuit performance.
Operating at high temperatures (up to 200 °C) ensures performance resilience in harsh environments.
With a maximum collector-emitter voltage of 36 V, this transistor can handle significant voltage levels in various applications.
Silicon material provides excellent electrical performance and cost-effectiveness, suitable for a wide range of applications.
A maximum collector current of 10 A allows for higher power applications, enhancing versatility for user needs.
Dual terminal position enables better circuit layout options and optimizes electrical performance.
Isolated case connection helps prevent unwanted electrical interactions, improving circuit reliability.
RF Power Bipolar Junction Transistors (BJT) BLV37 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
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Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
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Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
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No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Minimum Power Gain (Gp):
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BLV37 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
1N4148
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
SMBJ18CA
Thinking Electronic Industrial
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Semtech Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
LM358M
Texas Instruments
LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.
2N7002
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
1N4148WS
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Good-ark Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;
Dc Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;
KYOCERA AVX
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Hy Electronic
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
Iskra Semic Capacitors Industry
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0; Maximum Non Repetitive Peak Forward Current: 2 A;
World Products
BAV99
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
C1005X7R1E103K050BB
TDK
The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.
2N2222A
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SD1894
STMicroelectronics
SD1894 by STMicroelectronics is an NPN RF BJT transistor with a single configuration, ideal for amplifier applications in the L Band. It offers a min power gain of 10 dB, max power dissipation of 9.2 W, and operates at temperatures up to 200 °C.
BLT92/SL
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; JESD-30 Code: O-CRDB-F4; Transistor Application: AMPLIFIER;
MRF492A
MRF492A by Motorola is a NPN RF BJT with 11 dB power gain, ideal for amplifier applications in the VHF band. With a max power dissipation of 250 W and max collector current of 20 A, it operates up to 150°C. Featuring a ceramic-metal package, it has a transition frequency of 50 MHz and collector-emitter voltage of 18 V.
MF1011B900Y
NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Case Connection: BASE; Maximum Operating Temperature: 200 Cel;
935374082598
RF Power Bipolar Transistors;
SD1898
SD1898 by STMicroelectronics is a NPN RF BJT transistor with 87.5W power dissipation, suitable for L Band applications. It has a max collector current of 7.8A and operates at up to 200 °C temperature, making it ideal for amplifier circuits in high-frequency settings. The package style is flange mount with a square shape and flat terminals, offering easy surface-mount integration.
MRF20060R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;
TPV8100B
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR; JESD-30 Code: R-CDFM-F4;
RO2731B10W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.4 A; Case Connection: BASE;
BLV98CE
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-CDFM-F6;
BLV101B
BLV101B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 7.5 dB, operates at ultra-high frequencies, and supports a max collector current of 10 A. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
1075MP
Microsemi
1075MP by Microsemi is a NPN RF Power BJT with SINGLE configuration for AMPLIFIER applications. It operates in L BAND, has 4 terminals, and can handle up to 250W power dissipation. With a max operating temperature of 200°C, it features a collector-emitter voltage of 65V and collector current of 6.5A.
BLX14
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 4 A; Package Style (Meter): POST/STUD MOUNT;
PTC4001T
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Transistor Application: AMPLIFIER; JESD-30 Code: O-CRFM-F2;
BLV909T/R
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
AM83135-015
STMicroelectronics AM83135-015 is a NPN RF BJT transistor with 5.2 dB min power gain, ideal for S Band applications. It has a max power dissipation of 71W, operates at up to 250 °C, and supports switching functions in a flange mount package.
MX0912B351YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; Transistor Element Material: SILICON; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS;
BLW84
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 10;
AM1214-300
STMicroelectronics' AM1214-300 is an NPN RF BJT with 6.3 dB min power gain, ideal for L Band applications. It has a max power dissipation of 730W and can handle up to 18.75A collector current. Suitable for switching purposes, this transistor operates at temperatures up to 250 °C in a ceramic-metal-sealed co-fired package.
RX1214B150W
NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2; Maximum Operating Temperature: 200 Cel;
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BLV30
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1150 MHz; Maximum Collector Current (IC): 1.5 A; Terminal Position: RADIAL;
BLV31
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): 3 A; No. of Terminals: 4;
BLV32F
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2000 MHz; Maximum Collector Current (IC): 4 A; Transistor Element Material: SILICON;
BLV33
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Power Dissipation (Abs): 132 W; Maximum Collector Current (IC): 12.5 A;
BLV33F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 750 MHz; Maximum Power Dissipation (Abs): 133 W; Maximum Collector Current (IC): 12.5 A;
BLV36
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): 8.5 A; Maximum Collector-Emitter Voltage: 33 V;
BLV38
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
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