Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STMicroelectronics' AM1214-250 is a NPN RF Power BJT with 21A IC, 786W Pdiss, and L Band freq. Ideal for amplifier applications, it's a single-configured transistor in metal package for surface mount with flat terminals.
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Metal package body provides excellent heat dissipation, allowing for high power operation and increased reliability.
NPN transistors are commonly used in amplifier circuits, making this product suitable for amplification applications.
Simple single configuration makes it easy to integrate into circuits for amplifier applications.
Specifically designed for amplifier applications, ensuring optimal performance in such circuits.
Surface mount capability allows for easy mounting on circuit boards, saving space and simplifying assembly.
Rectangular shape provides a standardized form factor for easy integration into different systems.
Designed for use in L Band frequency applications, ensuring compatibility for a wide range of applications.
High power dissipation capability allows for operation at high power levels without overheating, ensuring reliability.
Flange mount package style provides secure mounting for stable operation in various environments.
Minimum DC current gain of 10 ensures consistent amplification performance across different operating conditions.
High maximum operating temperature of 250 °C allows for operation in harsh environments without degradation in performance.
Silicon material ensures high-performance characteristics, making this transistor reliable and efficient for amplifier applications.
High maximum collector current allows for reliable operation at high current levels, ideal for power amplifier applications.
Dual terminal position provides flexibility in wiring and connection options for different circuit configurations.
Base case connection ensures easy integration into amplifier circuits, simplifying the overall design.
RF Power Bipolar Junction Transistors (BJT) AM1214-250 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
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AM1214-250 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM2675M-ADJ/NOPB
National Semiconductor
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
2N7002
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
1N4148
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Meritek Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N5819HW-7-F
Diodes Incorporated
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
FDD5614P
Onsemi
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
BSS138DW-7-F
BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
Formosa Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;
Itt Components
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Reverse Recovery Time: .006 us;
Micro Commercial Components
BAV99W-7-F
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
2N2222A
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
International Devices
Promax-johnton
BLU30/12
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 6 dB;
BLV897
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Terminal Position: DUAL; Package Shape: RECTANGULAR;
2SC2642
Toshiba
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 2.8 A; Transistor Application: AMPLIFIER;
AM81720-012
STMicroelectronics
STMicroelectronics' AM81720-012 is an NPN RF BJT with 7.4 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 31.8W, operating up to 200 °C, and a DC current gain of at least 15 hFE.
BLX13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; No. of Terminals: 4; Transistor Application: AMPLIFIER;
AM81214-060
STMicroelectronics' AM81214-060 is a NPN RF BJT transistor with 6.6 dB power gain, ideal for L Band applications. It has a max power dissipation of 107W, operating up to 250 °C. The transistor features a flange mount package and is suitable for switching purposes in various electronic circuits.
2SC2641
The Toshiba 2SC2641 is an NPN RF Power BJT with a single configuration for amplifier applications. It offers a min power gain of 7.7 dB, operates in the ultra-high frequency band, and has a max collector-emitter voltage of 17 V. Ideal for flange mount setups, it can handle up to 15 W of power dissipation at a max operating temperature of 175°C.
BLS3135-20,114
NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Transistor Application: AMPLIFIER; Qualification: Not Qualified;
SD1460
SD1460 by STMicroelectronics is a NPN RF Power BJT with 4 terminals, capable of handling up to 160W power dissipation. Ideal for amplifier applications in the VHF band, it offers a max operating temperature of 200 °C and a collector current of 16A.
AM1517-012
STMicroelectronics' AM1517-012 is a NPN RF BJT with 8.5 dB min power gain, suitable for L Band applications. It has a max power dissipation of 27W, operating up to 200 °C, and features a flange mount package style.
BLV33F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 750 MHz; Maximum Power Dissipation (Abs): 133 W; Maximum Collector Current (IC): 12.5 A;
AM1011-075
STMicroelectronics' AM1011-075 is an NPN RF BJT transistor with a single configuration for switching applications. It offers a min power gain of 9.2 dB, max power dissipation of 175W, and operates in the L Band frequency range. The package is ceramic-metal-sealed cofired with a square shape and flange mount style, suitable for surface mounting.
AM1011-500
STMicroelectronics' AM1011-500 is a NPN RF Power BJT with 1360W power dissipation, ideal for L Band amplification. Featuring a max IC of 27A and hFE of 10, this transistor is surface-mountable and operates up to 250 °C, making it suitable for high-power applications.
PTB42001X
NPN; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: O-CRFM-F2;
SD1458
SD1458 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and a max power dissipation of 140W. Ideal for amplifier applications in the VHF band, it has a max collector-emitter voltage of 35V and operates at up to 175 °C.
SD1135
SD1135 by STMicroelectronics is a NPN RF BJT transistor with 4 terminals, operating in the ultra-high frequency band up to 470 MHz. It has a max power dissipation of 15W and can handle a collector current of 2A. Ideal for amplifier applications, this transistor offers a min DC current gain of 20 and operates at temperatures up to 175 °C.
BLW32
The NXP Semiconductors BLW32 is an NPN RF Power BJT with a single configuration, ideal for amplifier applications in the UHF band. It offers a min power gain of 11 dB, max collector-emitter voltage of 30V, and can handle up to 10.8W power dissipation at 200°C.
SD1414
SD1414 by STMicroelectronics is a NPN RF BJT transistor with 6 terminals, operating at 150 °C. It has a max power dissipation of 150W and can handle a collector current of 9A. Ideal for ultra-high frequency amplifier applications in a flange mount package.
LAE4002S
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .09 A; Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR; JESD-30 Code: S-CQMW-F4;
BLW31
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): 6 A; Minimum DC Current Gain (hFE): 10;
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AM1214-100
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 13 A; Minimum Power Gain (Gp): 6 dB;
AM1214-130
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Case Connection: BASE; JESD-30 Code: R-MDFM-F2;
AM1214-175
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 14 A; Minimum Power Gain (Gp): 7.3 dB;
AM1214-200
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 575 W; Maximum Collector Current (IC): 16 A; Terminal Position: DUAL;
AM1214-300
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 730 W; Maximum Collector Current (IC): 18.75 A; Package Style (Meter): FLANGE MOUNT;
AM1214-325
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-CDFM-F2;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 730 W; Maximum Collector Current (IC): 18.75 A; JESD-30 Code: R-CDFM-F2;
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