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AM1214-130

STMicroelectronics

AM1214-130 by STMicroelectronics

STMicroelectronics AM1214-130 is a NPN RF BJT transistor with 12A IC, hFE of 10. It's used in L Band amplifiers, features metal package body, and operates up to 250 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,606 parts In-Stock

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2,606

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Digiode

USA . 1,297 parts In-Stock

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1,297

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Anansix

USA . 459 parts In-Stock

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459

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,352 parts In-Stock

1+ parts

$1.572

100+ parts

-

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$1.415

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1,352

$1.572

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$1.415

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MKK Technologies

India . 182 parts In-Stock

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$2.957

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182

$2.957

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DigiPath Technology Company

USA . 182 parts In-Stock

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$2.957

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182

$2.957

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Parana Technologies

USA . 1,916 parts In-Stock

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$1.880

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1,916

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$1.880

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Northwest PG Solutions

USA . 1,273 parts In-Stock

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1,273

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Native Components

USA . 521 parts In-Stock

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521

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Corphita

USA . 147 parts In-Stock

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147

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Overview

Unleash the power of innovation with the AM1214-130 RF Power Bipolar Junction Transistor by STMicroelectronics. Known for its exceptional quality and reliability, this NPN transistor is a game-changer in the amplifier application category. With a maximum collector current of 12A and a minimum DC current gain of 10, this transistor offers unmatched performance in the L Band frequency range. Whether you're looking to amplify signals or enhance communication systems, this surface mount transistor is the ideal choice. Experience the value and benefits of cutting-edge technology with the AM1214-130 - your gateway to seamless connectivity and unparalleled efficiency.

Feature Benefit Bullets

Package Body Material: METAL

Metal packaging provides durability and heat dissipation, ensuring reliable performance over extended periods of use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product suitable for various amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, offering high performance in amplification tasks.

Surface Mount: YES

Surface mount capability enables easy integration into modern electronics and PCB designs for compact and efficient solutions.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting within electronic circuits and systems.

Minimum DC Current Gain (hFE): 10

With a minimum DC current gain of 10, this product provides consistent and reliable amplification performance in different circuit configurations.

Maximum Operating Temperature: 250 °C

High maximum operating temperature of 250 °C ensures stable performance under varying thermal conditions.

Maximum Collector Current (IC): 12 A

Capable of handling a maximum collector current of 12 A, making it suitable for high-power applications where higher currents are required.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM1214-130 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

Highest Frequency Band:

L BAND

JESD-30 Code:

R-MDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

METAL

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

AM1214-130 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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