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AM2729-125

STMicroelectronics

AM2729-125 by STMicroelectronics

STMicroelectronics' AM2729-125 is a NPN BJT transistor with 500W power dissipation, ideal for S Band applications. It has a max collector current of 16A and operates up to 250 °C. Suitable for switching purposes, this single configuration transistor is surface mountable with a ceramic-metal package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,406 parts In-Stock

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2,406

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Anansix

USA . 1,776 parts In-Stock

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1,776

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Digiode

USA . 464 parts In-Stock

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464

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Sunrise Surplus Inc.

USA . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 1,968 parts In-Stock

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$0.796

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$0.716

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1,968

$0.796

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$0.716

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MKK Technologies

India . 189 parts In-Stock

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$1.496

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189

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DigiPath Technology Company

USA . 189 parts In-Stock

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$1.496

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189

$1.496

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Corphita

USA . 4,928 parts In-Stock

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4,928

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Parana Technologies

USA . 1,501 parts In-Stock

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$0.952

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1,501

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$0.952

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Native Components

USA . 879 parts In-Stock

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879

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Northwest PG Solutions

USA . 609 parts In-Stock

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609

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Overview

Experience the reliable performance and versatility of the AM2729-125 RF Power Bipolar Junction Transistor by STMicroelectronics. With a maximum power dissipation of 500W and a high-frequency band of S Band, this transistor is ideal for switching applications. The ceramic, metal-sealed cofired package ensures durability and stability, making it a valuable addition to any project requiring robust performance. Trust in STMicroelectronics' reputation for quality and innovation, and elevate your designs with the AM2729-125.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials provides excellent durability and stability, making this product a reliable choice for high-performance applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering low ON-resistance and high input impedance.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and high efficiency in switching operations.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving space and reducing overall system costs.

Package Shape: RECTANGULAR

The rectangular package shape provides a standardized form factor for easy integration into existing circuit designs.

Terminal Form: FLAT

Flat terminals enable secure and reliable connections, ensuring consistent performance in demanding operational conditions.

Highest Frequency Band: S BAND

The capability to operate in the S Band frequency range makes this transistor suitable for high-frequency communications and radar systems.

Maximum Power Dissipation (Abs): 500 W

With a high maximum power dissipation rating, this transistor can handle heavy loads and operate reliably under high power conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers convenient installation and secure mechanical support, ideal for robust industrial applications.

Minimum DC Current Gain (hFE): 30

The minimum DC current gain of 30 ensures stable and consistent performance in various operating conditions.

Maximum Operating Temperature: 250 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without sacrificing performance or reliability.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, low noise, and good thermal stability, making them a popular choice for a wide range of applications.

Maximum Collector Current (IC): 16 A

A high maximum collector current rating of 16 A allows for handling large current loads, making this transistor suitable for power applications.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit layout and connections, enabling versatile use in different configurations.

Case Connection: BASE

The base connection facilitates easy circuit design and integration, making it simple to connect this transistor in various electronic systems.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) AM2729-125 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AM2729-125 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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