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SD1480

STMicroelectronics

SD1480 by STMicroelectronics

SD1480 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and a max power dissipation of 270W. It operates in the VHF band, with a max collector-emitter voltage of 36V. Ideal for amplifier applications, it has a flat terminal form and gold finish.

Median Price

$320.000

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 2 parts In-Stock

1+ parts

$320.000

100+ parts

-

1k+ parts

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2

$320.000

-

-

-

Vyrian

USA . 6,681 parts In-Stock

1+ parts

-

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6,681

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Anansix

USA . 2,418 parts In-Stock

1+ parts

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2,418

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-

-

-

Digiode

USA . 1,024 parts In-Stock

1+ parts

-

100+ parts

-

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1,024

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ECAB

Sweden . 2 parts In-Stock

1+ parts

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,127 parts In-Stock

1+ parts

$0.541

100+ parts

-

1k+ parts

$0.487

10k+ parts

-

2,127

$0.541

-

$0.487

-

MKK Technologies

India . 1,281 parts In-Stock

1+ parts

$1.017

100+ parts

-

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1,281

$1.017

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DigiPath Technology Company

USA . 1,281 parts In-Stock

1+ parts

$1.017

100+ parts

-

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1,281

$1.017

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-

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Corphita

USA . 994 parts In-Stock

1+ parts

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994

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Parana Technologies

USA . 72 parts In-Stock

1+ parts

-

100+ parts

$0.647

1k+ parts

-

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72

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$0.647

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-

Overview

Discover the cutting-edge SD1480 RF Power BJT by STMicroelectronics, a high-quality amplifier transistor designed for very high-frequency applications. With a maximum power dissipation of 270 W and a maximum collector current of 20 A, this NPN transistor offers unmatched performance in a compact, round package shape. Ideal for a wide range of amplifier applications, the SD1480 delivers superior reliability and efficiency, making it the perfect choice for customers seeking top-notch quality and value in their electronic components. Experience the difference with STMicroelectronics' innovative semiconductor solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, ensuring reliable performance in amplifier applications.

Configuration: SINGLE

Simplifies the circuit design and makes it easy to use in single-amplifier setups.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high performance in amplifier circuits.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Package Shape: ROUND

Facilitates efficient heat dissipation and allows for easy mounting in various positions.

Terminal Form: FLAT

Provides a stable connection and easy soldering for secure circuit integration.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Enables high-frequency operation, suitable for applications requiring a wide frequency range.

No. of Terminals: 6

Offers multiple connection points for greater versatility in circuit design and integration.

Maximum Power Dissipation (Abs): 270 W

Capable of handling high power levels, ensuring reliable performance in demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and efficient heat dissipation, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 20

Provides consistent amplification and reliable output in amplifier circuits.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for applications in challenging thermal environments.

Maximum Collector-Base Capacitance: 250 pF

Low capacitance allows for high-frequency operation and stable performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 36 V

Can handle relatively high voltage levels, ensuring safe and reliable operation in amplifier circuits.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability, ensuring consistent operation in amplifier applications.

Maximum Collector Current (IC): 20 A

Capable of handling high current levels, making it suitable for applications requiring high power output.

Terminal Finish: GOLD

Gold terminal finish ensures reliable electrical connections, preventing corrosion and maintaining performance over time.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1480 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

DIFFUSED EMITTER BALLAST RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

250 pF

Maximum Collector-Emitter Voltage:

36 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PXFM-F6

JESD-609 Code:

e4

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

GOLD

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1480 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-210-4237, 5961012104237

NIIN

012104237

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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