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2SA1403E

Onsemi

2SA1403E by Onsemi

The Onsemi 2SA1403E is a PNP RF Power BJT with max. Vce of 60V and Ic of 0.5A. It has fT of 800MHz, ideal for switching applications in electronics due to its high frequency capabilities and single-terminal configuration. The transistor's package style is flange mount with through-hole terminals made of Tin/Copper/Silver/Nickel alloy.

Median Price

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Lifecycle Status

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4

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1k+

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Digiode

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Vyrian

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Sogenti Electronics

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Fibra_Brandt Electronic GMBH

Germany . 7 parts In-Stock

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Native Components

USA . 550 parts In-Stock

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Northwest PG Solutions

USA . 842 parts In-Stock

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TANS Electronics

Latvia . 4,332 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Corphita

USA . 1,027 parts In-Stock

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UHIMA Technologies

Türkiye . 934 parts In-Stock

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Problanco Electronics

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Overview

Enhance your electronic projects with the high-quality 2SA1403E from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability in their RF Power Bipolar Junction Transistors (BJT). Ideal for switching applications, this PNP transistor offers a maximum collector-emitter voltage of 60V and a nominal transition frequency of 800MHz. With its durable plastic/epoxy package body material and through-hole terminal form, the 2SA1403E guarantees ease of use and longevity. Upgrade your designs with this single-configured transistor that delivers exceptional value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers good insulation properties and durability, making the transistor suitable for various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high speed switching applications, making this transistor suitable for switching applications.

Configuration: SINGLE

Single configuration simplifies the circuit design, making it easier to use in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

3 terminals offer flexibility in circuit connectivity and ensure proper functioning of the transistor in various applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of installation in systems.

Maximum Collector-Emitter Voltage: 60 V

With a maximum voltage of 60V, this transistor can handle a wide range of voltage requirements in different applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in switching operations.

Maximum Collector Current (IC): 0.5 A

With a maximum current of 0.5A, this transistor can handle moderate power requirements in switching applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The terminal finish provides good conductivity and reliability in circuit connections, ensuring stable performance.

Terminal Position: SINGLE

Single terminal position simplifies the circuit layout and ensures proper installation in various systems.

Nominal Transition Frequency (fT): 800 MHz

With a high transition frequency of 800MHz, this transistor offers fast response times and high-speed switching capabilities.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2SA1403E attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1403E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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