Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SD1732 by STMicroelectronics is a NPN RF BJT with 2 elements, suitable for amplifier applications in the UHF band. It has a max power dissipation of 65W, max collector-emitter voltage of 25V, and operates up to 200 °C. This transistor comes in a plastic package with flat terminals and nickel finish.
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$1.687
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$1.072
Provides durability and reliability, making the transistor suitable for various operating conditions.
NPN transistors are commonly used in amplification circuits and are compatible with a wide range of applications.
Common emitter configuration offers high voltage gain and 2 elements provide increased performance.
Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.
Enables easy mounting on PCBs, saving space and simplifying assembly processes.
Can handle high power levels without overheating, making it suitable for demanding applications.
Can operate effectively in high-temperature environments without performance degradation.
Suitable for applications requiring voltage regulation or switching functionality up to 25 volts.
RF Power Bipolar Junction Transistors (BJT) SD1732 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Additional Features:
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Highest Frequency Band:
JESD-30 Code:
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No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
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Transistor Application:
Transistor Element Material:
SD1732 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
2N7002
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
2N2222A
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
SZNUP2105LT1G
Onsemi
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
Tesla Elektronicke Soucastky
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
INA826AIDGKR
Texas Instruments
INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
SMBJ18CA
Lite-on Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
MMBT2222ALT1G
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
ULN2803A
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
ATMEGA328P-AU
Microchip Technology
ATMEGA328P-AU by Microchip: 8-bit RISC CPU, 20 MHz clock, 23 I/O lines. Ideal for industrial applications with SPI, TWI, USART connectivity and low power mode. Features include 2048 RAM bytes, 1024 EEPROM size, and 16384 ROM words.
BAV99-7-F
Diodes Incorporated
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
STM32H750VBT6
STMicroelectronics
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
BAV99
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
MBRS130LT3G
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BFT98B
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3300 MHz; Maximum Power Dissipation (Abs): 2.3 W; Maximum Collector Current (IC): .2 A;
SD1446
SD1446 by STMicroelectronics is an NPN RF Power BJT with a max collector-emitter voltage of 18V and a max collector current of 12A. It is designed for ultra-high frequency band applications, featuring a plastic/epoxy package body material and radial terminal position. Ideal for amplifier circuits in the UHF band, this transistor has a single configuration with 4 terminals in a round flange mount package style.
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-CDFM-F2;
5962F0721806VXC
Renesas Electronics
PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; JESD-30 Code: R-CDFP-F16;
2SC2290
Toshiba
The Toshiba 2SC2290 is a NPN RF Power BJT with 11.8 dB power gain, ideal for amplifier applications in the high-frequency band. It features a max power dissipation of 175W, collector-emitter voltage of 18V, and transition frequency of 100MHz.
BLS3135-65TRAY
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: S BAND; Case Connection: BASE;
BLV904
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Collector-Emitter Voltage: 28 V;
RZ1214B35Y
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 3 A; Terminal Form: FLAT;
BLY88A
BLY88A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 2.5 A, operates up to 200 °C, and offers a min power gain of 7.5 dB in the very high frequency band. Its round, flat package ensures efficient performance in various electronic devices.
BLU15/12
BLU15/12 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 35W, operates at ultra-high frequencies, and offers a min power gain of 7.8 dB. Its robust design supports high temperatures up to 200 °C.
LV2024E45RTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .0011 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL;
SD1541-09
SD1541-09 by STMicroelectronics is a NPN RF BJT transistor with 65V VCE, 22A IC, and 1460W Ptot. Ideal for L Band applications, it's a single configuration switch transistor in a ceramic-metal package suitable for high-power switching operations.
BLT93/SL
BLT93/SL from NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 1.2 A, operates at ultra-high frequencies, and withstands temperatures up to 200 °C. Its ceramic-metal sealed package ensures durability in demanding environments.
RX1214B300YTRAY
NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Additional Features: WITH EMITTER BALLASTING RESISTORS; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLT50
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
BLY94
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Base Capacitance: 130 pF;
PZ2327B15U
PZ2327B15U by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 32W, operates at frequencies in the S band, and withstands temperatures up to 200 °C. Its flat terminal design ensures efficient surface mounting.
5962F0721804V9A
NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum Operating Temperature: -55 Cel;
2SC2319
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2900 MHz; Maximum Collector Current (IC): .35 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
LTE21025R
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 15;
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SD1726
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 18;
SD1727
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 10 A; Maximum Collector-Base Capacitance: 220 pF;
SD1727(THX15)
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
SD1728
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 40 A; Highest Frequency Band: HIGH FREQUENCY BAND;
SD1728-15
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; JESD-30 Code: O-PRFM-F4; Terminal Position: RADIAL;
SD1728C
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Package Shape: ROUND; Package Body Material: PLASTIC/EPOXY;
SD1728D
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; No. of Terminals: 4; JESD-30 Code: O-PRFM-F4;
SD1728E
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; JESD-30 Code: O-PRFM-F4; Package Body Material: PLASTIC/EPOXY;
SD1728F
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 55 V; Package Body Material: PLASTIC/EPOXY;
SD1729
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: O-PRFM-F4;
SD1729(TH416)
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Terminal Form: FLAT;
SD1730
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 16 A; Maximum Operating Temperature: 200 Cel;
SD1730(TH560)
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 16 A; No. of Terminals: 4;
SD1731
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 20 A; Qualification: Not Qualified;
SD1731-14
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 257 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;
SD1731(TH562)
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 20 A; Terminal Position: RADIAL;
SD1732(TDS595)
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2.6 A; Package Shape: RECTANGULAR; No. of Elements: 2;
SD1733
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 127 W; Maximum Collector Current (IC): 3.25 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
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