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SD1730(TH560)

STMicroelectronics

SD1730(TH560) by STMicroelectronics

SD1730(TH560) by STMicroelectronics is an NPN RF power BJT designed for high-frequency applications. It features a max power dissipation of 320 W, operates up to 200 °C, and supports collector currents of 16 A. Ideal for demanding RF amplification tasks in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,811 parts In-Stock

1+ parts

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3,811

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Digiode

USA . 1,443 parts In-Stock

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1,443

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Anansix

USA . 186 parts In-Stock

1+ parts

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186

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,479 parts In-Stock

1+ parts

$0.734

100+ parts

-

1k+ parts

$0.661

10k+ parts

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1,479

$0.734

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$0.661

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MKK Technologies

India . 1,240 parts In-Stock

1+ parts

$1.381

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1,240

$1.381

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DigiPath Technology Company

USA . 1,240 parts In-Stock

1+ parts

$1.381

100+ parts

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1,240

$1.381

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Corphita

USA . 1,241 parts In-Stock

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1,241

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Parana Technologies

USA . 641 parts In-Stock

1+ parts

-

100+ parts

$0.878

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641

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$0.878

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Overview

Unlock unparalleled performance with the SD1730(TH560) from STMicroelectronics, a leader in innovation and reliability. This RF Power BJT excels in demanding applications, delivering exceptional power dissipation and efficiency. Designed for very high frequency operations, its robust NPN configuration ensures superior signal integrity, making it perfect for communications and industrial uses. Trust in STMicroelectronics' legacy of quality to elevate your projects—experience unmatched value and performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The robust plastic/epoxy body material offers durability and protection against environmental factors, ensuring reliability in various applications.

Polarity or Channel Type: NPN

As an NPN transistor, this device allows for easy interfacing with a wide range of circuits, making it versatile for amplifying and switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design, making it easier to integrate this transistor into existing systems.

Surface Mount: YES

Being surface mount compatible allows for reduced PCB space and enhanced manufacturing efficiency, ideal for modern compact designs.

Package Shape: ROUND

The round package shape facilitates efficient thermal management and structural integrity, contributing to the overall reliability of the device.

Terminal Form: FLAT

Flat terminals enhance the ease of soldering during assembly, improving the connection quality and long-term reliability.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequency applications, this transistor is suitable for advanced RF applications, providing superior performance in signal amplification.

No. of Terminals: 4

The four-terminal configuration offers greater flexibility in circuit design, making it easier to implement complex circuits with multiple functionalities.

Maximum Power Dissipation (Abs): 320 W

With a maximum power dissipation of 320 W, this transistor can handle significant power loads, making it ideal for high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides a secure and stable mounting solution, ensuring reliable operation even in demanding conditions.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures sufficient amplification capabilities, making it effective for a variety of signal processing tasks.

Maximum Operating Temperature: 200 °C

Operating at a maximum temperature of 200 °C indicates high thermal endurance, allowing for use in environments with elevated temperatures without degradation.

Maximum Collector-Emitter Voltage: 35 V

A maximum collector-emitter voltage of 35 V provides a robust capability to withstand voltage spikes, enhancing safety and reliability in circuit operation.

Transistor Element Material: SILICON

The use of silicon as the element material ensures excellent electrical performance and stability, making it a standard choice in RF applications.

Maximum Collector Current (IC): 16 A

With a maximum collector current rating of 16 A, this transistor is equipped to handle high current loads, making it suitable for power-intensive applications.

Terminal Position: RADIAL

Radial terminal positioning allows for easy integration into circuits, simplifying PCB layout and assembly processes.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1730(TH560) attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

SILICON

Trade Compliance

SD1730(TH560) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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