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SD1729(TH416)

STMicroelectronics

SD1729(TH416) by STMicroelectronics

SD1729(TH416) by STMicroelectronics is an NPN RF power BJT designed for high-frequency applications. It features a max collector current of 12 A, operates up to 200 °C, and supports voltages up to 35 V. Ideal for surface mount designs in communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,813 parts In-Stock

1+ parts

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4,813

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Anansix

USA . 1,841 parts In-Stock

1+ parts

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1,841

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Digiode

USA . 603 parts In-Stock

1+ parts

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603

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,165 parts In-Stock

1+ parts

$0.596

100+ parts

-

1k+ parts

$0.537

10k+ parts

-

1,165

$0.596

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$0.537

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MKK Technologies

India . 1,750 parts In-Stock

1+ parts

$1.121

100+ parts

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1,750

$1.121

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DigiPath Technology Company

USA . 1,750 parts In-Stock

1+ parts

$1.121

100+ parts

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1,750

$1.121

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Parana Technologies

USA . 1,340 parts In-Stock

1+ parts

-

100+ parts

$0.713

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1,340

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$0.713

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Corphita

USA . 1,131 parts In-Stock

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1,131

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Overview

Elevate your RF projects with the SD1729(TH416) from STMicroelectronics, a leader in innovative semiconductor solutions. This high-performance NPN RF power BJT guarantees exceptional reliability and efficiency, making it ideal for demanding applications in telecommunications and broadcasting. With its robust design and impressive thermal capabilities, the SD1729 empowers engineers to create cutting-edge devices that stand the test of time, delivering unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are ideal for amplification and switching applications, offering efficient operation for high-frequency signals.

Configuration: SINGLE

A single configuration simplifies usage in circuits, ensuring ease of design while maintaining high performance.

Surface Mount: YES

Surface mount technology allows for compact designs and improves manufacturing efficiency, making this transistor suitable for modern electronic devices.

Package Shape: ROUND

The round package shape enhances thermal dissipation, which is crucial for maintaining performance in high-power applications.

Terminal Form: FLAT

Flat terminals facilitate robust electrical connections and simplify the soldering process during assembly.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

This specification enables the transistor to perform well in applications requiring high-speed operation, such as RF communications.

No. of Terminals: 4

Four terminals allow for versatility in circuit design and configuration, enhancing its application range.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers secure installation options, ensuring stability and reliability in various settings.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature makes this transistor suitable for demanding environments, ensuring reliable performance under heat.

Maximum Collector-Emitter Voltage: 35 V

This voltage rating provides a good balance of power handling capability and operational safety in various circuit applications.

Transistor Element Material: SILICON

Silicon is a proven material for transistors, offering good electrical properties and reliability in a wide range of temperatures.

Maximum Collector Current (IC): 12 A

A maximum collector current of 12 A enables this transistor to handle significant power levels, making it suitable for high-current applications.

Terminal Position: RADIAL

Radial terminal positioning allows for efficient space utilization on circuit boards, enhancing design flexibility.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1729(TH416) attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

SILICON

Trade Compliance

SD1729(TH416) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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