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BLW77

NXP Semiconductors

BLW77 by NXP Semiconductors

BLW77 by NXP Semiconductors is a single NPN RF Power BJT with a max power dissipation of 245W. It operates in the very high frequency band, with a max collector-emitter voltage of 35V and max collector current of 12A. Ideal for amplifier applications, this transistor has a nominal transition frequency of 320MHz and can withstand temperatures up to 200°C.

Median Price

$61.650

Lifecycle Status

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7

In-Stock Inventory

1k+

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Mouser Electronics

USA . 18 parts In-Stock

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$61.650

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$50.440

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Nova Conductors

Japan . 500 parts In-Stock

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$56.540

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$56.540

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Digiode

USA . 3,614 parts In-Stock

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$58.568

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Anansix

USA . 2,437 parts In-Stock

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Vyrian

USA . 300 parts In-Stock

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300

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VNN

France . 209 parts In-Stock

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ECAB

Sweden . 71 parts In-Stock

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AZTECH Wire

Italy . 300 parts In-Stock

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$15.456

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$15.456

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Aranea Global

USA . 100 parts In-Stock

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$55.409

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$53.193

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Corphita

USA . 1,982 parts In-Stock

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$55.485

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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UNI Independent Distributors

Spain . 1,095 parts In-Stock

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Overview

Experience the next level of RF power amplification with the BLW77 from NXP Semiconductors. Designed with precision and expertise, this transistor offers top-of-the-line performance in a variety of amplifier applications. With a maximum power dissipation of 245W and very high frequency band capabilities, this NPN BJT delivers exceptional reliability and efficiency. Upgrade your systems with the BLW77 and unlock endless possibilities for your projects. Elevate your RF power solutions today with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired material ensures high thermal conductivity and excellent stability, making this product reliable for high-power applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing amplifier circuits, providing versatility and compatibility with various designs.

Configuration: SINGLE

The single configuration simplifies the assembly process and reduces any potential points of failure, resulting in a more robust and dependable device.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high performance and efficiency in signal amplification processes.

Package Shape: ROUND

The round package shape enables efficient heat dissipation, ensuring optimal performance and reliability under high-power operating conditions.

Terminal Form: FLAT

The flat terminal form simplifies assembly and connection processes, providing ease of installation and maintenance for users.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band, this transistor is ideal for applications requiring precise signal amplification and transmission.

No. of Terminals: 4

The four terminals offer flexibility in connection options and ensure stable electrical connections for improved overall performance.

Maximum Power Dissipation (Abs): 245 W

With a high maximum power dissipation rating, this transistor can handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure mounting and efficient heat dissipation, making it suitable for demanding industrial applications.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures consistent amplification performance and reliability across a wide range of operating conditions.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand extreme environments and operate reliably under high-temperature conditions.

Maximum Collector-Emitter Voltage: 35 V

The high maximum collector-emitter voltage rating of 35V allows for safe and reliable operation in a variety of amplifier circuits.

Transistor Element Material: SILICON

Made of silicon, this transistor offers excellent switching speed and low saturation voltage, ensuring efficient signal amplification.

Maximum Collector Current (IC): 12 A

With a high maximum collector current rating of 12A, this transistor can handle high current loads with ease, making it suitable for high-power applications.

Terminal Position: RADIAL

The radial terminal position simplifies installation and connection, providing easy access to the terminals for convenient wiring.

Case Connection: ISOLATED

The isolated case connection enhances safety and reliability by preventing electrical interference and short circuits, ensuring stable operation.

Nominal Transition Frequency (fT): 320 MHz

With a high nominal transition frequency of 320MHz, this transistor delivers fast switching speeds and high-frequency response for precise signal amplification.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLW77 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BLW77 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-115-0893, 5961991150893

NIIN

991150893

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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