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BLW77

Asi Semiconductor

BLW77 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 245 W; Maximum Collector Current (IC): 12 A; No. of Elements: 1;

Median Price

$61.650

Lifecycle Status

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7

In-Stock Inventory

1k+

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Mouser Electronics

USA . 18 parts In-Stock

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$61.650

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$50.440

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Nova Conductors

Japan . 500 parts In-Stock

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$56.540

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Digiode

USA . 3,614 parts In-Stock

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$58.568

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Anansix

USA . 2,437 parts In-Stock

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Vyrian

USA . 300 parts In-Stock

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300

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VNN

France . 209 parts In-Stock

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ECAB

Sweden . 71 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 300 parts In-Stock

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$15.456

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Aranea Global

USA . 100 parts In-Stock

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$55.409

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$53.193

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Corphita

USA . 1,982 parts In-Stock

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$55.485

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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UNI Independent Distributors

Spain . 1,095 parts In-Stock

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLW77 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRFM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLW77 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-115-0893, 5961991150893

NIIN

991150893

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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