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SD1459

STMicroelectronics

SD1459 by STMicroelectronics

SD1459 by STMicroelectronics is a NPN RF Power BJT with 4 terminals, capable of handling up to 150W power dissipation. It operates in the VHF band and has a max collector-emitter voltage of 30V. Ideal for amplifier applications due to its high current capacity and very high frequency band support.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,465 parts In-Stock

1+ parts

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3,465

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Digiode

USA . 1,268 parts In-Stock

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1,268

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Anansix

USA . 561 parts In-Stock

1+ parts

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561

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Sinequanon

UK . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,277 parts In-Stock

1+ parts

$0.972

100+ parts

-

1k+ parts

$0.875

10k+ parts

-

1,277

$0.972

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$0.875

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MKK Technologies

India . 203 parts In-Stock

1+ parts

$1.829

100+ parts

-

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203

$1.829

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DigiPath Technology Company

USA . 203 parts In-Stock

1+ parts

$1.829

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203

$1.829

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Corphita

USA . 2,940 parts In-Stock

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2,940

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Parana Technologies

USA . 495 parts In-Stock

1+ parts

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$1.163

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495

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$1.163

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Assy Fe

Spain . 8 parts In-Stock

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8

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Overview

Unlock unparalleled performance with the SD1459 RF Power Bipolar Junction Transistor from STMicroelectronics. This NPN transistor boasts a very high frequency band, making it ideal for amplifier applications. With a maximum power dissipation of 150W and a maximum collector current of 16A, this transistor delivers unmatched reliability and efficiency. Upgrade your electronic designs with the quality and precision of STMicroelectronics, trusted by industry professionals worldwide. Experience the difference with the SD1459 and take your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuit designs.

Configuration: SINGLE

Simplified circuit design and ease of use for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such scenarios.

Package Shape: ROUND

Compact and space-saving design for efficient PCB layout.

Terminal Form: FLAT

Facilitates easy connection and soldering on the PCB surface.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for high-frequency applications, ensuring reliable performance in demanding environments.

No. of Terminals: 4

Provides multiple connection points for flexibility in circuit design.

Maximum Power Dissipation (Abs): 150 W

High power handling capability for demanding applications.

Package Style (Meter): POST/STUD MOUNT

Allows for easy mounting and secure installation in various devices.

Minimum DC Current Gain (hFE): 20

Ensures proper amplification of signals in the circuit.

Maximum Operating Temperature: 200 °C

Can withstand high operating temperatures, ideal for industrial applications.

Maximum Collector-Base Capacitance: 150 pF

Low capacitance minimizes signal distortion and improves overall performance.

Maximum Collector-Emitter Voltage: 30 V

Safe voltage handling capability for reliable operation.

Transistor Element Material: SILICON

Provides high performance and reliability compared to other material choices.

Maximum Collector Current (IC): 16 A

High collector current rating for enhanced power handling capabilities.

Terminal Position: RADIAL

Radial terminal position for convenient placement in the circuit layout.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1459 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

DIFFUSED EMITTER BALLAST RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

150 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1459 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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