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SD1434

STMicroelectronics

SD1434 by STMicroelectronics

SD1434 by STMicroelectronics is a NPN RF Power BJT with 175W power dissipation, suitable for amplifier applications in the UHF band. It has a max collector-emitter voltage of 16V, can handle up to 10A collector current, and operates at temperatures up to 200 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Digiode

USA . 4,212 parts In-Stock

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Anansix

USA . 1,395 parts In-Stock

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1,395

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Vyrian

USA . 1,155 parts In-Stock

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Connector Distribution Corp

USA . 2 parts In-Stock

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Right Parts Inc.

USA . 2 parts In-Stock

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Huijzer Components

Netherlands . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 1,576 parts In-Stock

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$1.510

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$1.359

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$1.510

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$1.359

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MKK Technologies

India . 772 parts In-Stock

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$2.839

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772

$2.839

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DigiPath Technology Company

USA . 772 parts In-Stock

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$2.839

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772

$2.839

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Corphita

USA . 4,408 parts In-Stock

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4,408

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Parana Technologies

USA . 512 parts In-Stock

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$1.805

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512

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Kepictronics

USA . 99 parts In-Stock

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Overview

Experience unparalleled performance with the SD1434 RF Power BJT transistor from STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers top-quality products that exceed expectations. The SD1434 is perfect for amplifier applications in the ultra-high frequency band, offering a maximum power dissipation of 175W and a maximum collector current of 10A. With its plastic/epoxy package body material, NPN polarity, and single configuration, this transistor is designed to provide exceptional value and reliability. Elevate your projects with the SD1434 and unlock endless possibilities in RF power amplification.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material offers good thermal properties and protection, making the transistor durable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, providing high current gain and efficiency.

Configuration: SINGLE

Single configuration simplifies the circuit design and enhances reliability.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, providing high power and efficiency in signal amplification.

Surface Mount: YES

Surface mount capability offers ease of installation and space-saving benefits.

Package Shape: ROUND

Round package shape helps in efficient mounting and heat dissipation.

Terminal Form: FLAT

Flat terminals ensure easy soldering and stable connections.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra high frequency applications, ideal for high-speed signal processing.

No. of Terminals: 6

Having 6 terminals allows for more connections and versatility in circuit configuration.

Maximum Power Dissipation (Abs): 175 W

High power dissipation capability enables the transistor to handle large power levels without damage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting and ease of installation in various systems.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, the transistor can withstand high temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 16 V

With a high collector-emitter voltage rating of 16V, the transistor can handle higher voltage levels safely.

Transistor Element Material: SILICON

Silicon material ensures high reliability and performance in various operating conditions.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, the transistor can handle high current applications with efficiency.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) SD1434 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PXFM-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

UNSPECIFIED

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1434 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5999-01-646-3215, 5999016463215

NIIN

016463215

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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