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2N3866A

Microchip Technology

2N3866A by Microchip Technology

2N3866A by Microchip Technology is an NPN RF BJT with a VCEsat of 1V, Gp of 10dB, and hFE of 25. It is used as an amplifier in the UHF band due to its high fT of 800MHz. The transistor has a max VCE of 30V and IC of 0.4A, making it suitable for high-frequency applications.

Median Price

$8.220

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Nova Conductors

Japan . 15 parts In-Stock

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American Microsemiconductor Inc.

USA . 82 parts In-Stock

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Bristol Electronics

USA . 455 parts In-Stock

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Vyrian

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Chip Stock

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PUI

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Digiode

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Anansix

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Holdelec - ElecDif-Pro

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Prism Electronics

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Electronic Expediters

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M&R Communications

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Extreme Components

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LittleDiode

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Sunrise Surplus Inc.

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ECAB

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NAC Semi

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Microfarads

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Resion

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Electronics Depot

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Aztec Data Supply Inc.

USA . 3,255 parts In-Stock

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$0.543

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Continental Prestige Electronics

USA . 6,871 parts In-Stock

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$3.375

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$3.308

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Argo Parts USA

USA . 2,842 parts In-Stock

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Corohmni

South Africa . 491 parts In-Stock

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AZTECH Wire

Italy . 618 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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LOOK Integrated Logistics

Peru . 7,288 parts In-Stock

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Problanco Electronics

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Montano Global Distributors

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Microchip USA

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LMD Electronica

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TANS Electronics

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NIA Electronics

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Glotronic Ltd.

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Corphita

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GreenTree Electronics

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UHIMA Technologies

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Perfect Parts

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Netroflash

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Cyclops Electronics Ltd (Excess)

UK . 18 parts In-Stock

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Advanced Electronics

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RTC Component Inc.

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A-Plus Industry Inc.

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Overview

Enhance your RF power amplifier designs with the high-quality 2N3866A by Microchip Technology! This NPN bipolar junction transistor offers a minimum power gain of 10 dB and a maximum VCEsat of 1V, perfect for applications in the ultra-high-frequency band. With its reliable performance and durable metal package body material, this transistor is ideal for amplifying signals with ease. Take your projects to the next level with the unmatched value and benefits that the 2N3866A provides, making it a top choice for engineers and hobbyists alike.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good thermal conductivity, ensuring efficient heat dissipation and improving overall performance and reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits due to their high input impedance and good linearity, making this transistor suitable for amplifier applications.

Minimum Power Gain (Gp): 10 dB

The minimum power gain of 10 dB indicates that this transistor has good amplification capability, making it suitable for applications where signal amplification is required.

Maximum VCEsat: 1 V

Low VCE saturation voltage of 1V indicates minimal power dissipation when the transistor is in saturation mode, leading to higher efficiency and lower power consumption.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this transistor can handle higher voltage levels, making it suitable for applications where higher voltage operation is required.

Nominal Transition Frequency (fT): 800 MHz

High nominal transition frequency of 800 MHz indicates that this transistor can operate at higher frequencies, making it ideal for applications in the ultra-high frequency band.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2N3866A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

10 dB

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

2N3866A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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