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BDP954H6327XTSA1

Infineon Technologies

BDP954H6327XTSA1 by Infineon Technologies

Infineon's BDP954H6327XTSA1 is a PNP RF Power BJT with 100V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.278

Lifecycle Status

EOL

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 18,500 parts In-Stock

1+ parts

-

100+ parts

$0.245

1k+ parts

$0.203

10k+ parts

$0.181

18,500

-

$0.245

$0.203

$0.181

DigiKey

USA . 18,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.310

10k+ parts

-

18,500

-

-

$0.310

-

Verical

USA . 18,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.227

18,500

-

-

-

$0.227

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.245

10k+ parts

$0.238

3,000

-

-

$0.245

$0.238

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.333

10k+ parts

$0.299

3,000

-

-

$0.333

$0.299

RS (Exports)

UK . 2,713 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.430

10k+ parts

$0.382

2,713

-

-

$0.430

$0.382

EBV Elektronik

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,000

-

-

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 873 parts In-Stock

1+ parts

$0.256

100+ parts

-

1k+ parts

-

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873

$0.256

-

-

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Nova Conductors

Japan . 33 parts In-Stock

1+ parts

$0.392

100+ parts

-

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33

$0.392

-

-

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Vyrian

USA . 11,352 parts In-Stock

1+ parts

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11,352

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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$1.050

10k+ parts

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1,000

-

-

$1.050

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VNN

France . 705 parts In-Stock

1+ parts

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705

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Distributors (Availability)

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Ampacity Inc.

Singapore . 11,386 parts In-Stock

1+ parts

$0.208

100+ parts

-

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11,386

$0.208

-

-

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Corphita

USA . 266 parts In-Stock

1+ parts

$0.242

100+ parts

-

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266

$0.242

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-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.385

100+ parts

-

1k+ parts

$0.369

10k+ parts

-

1,000

$0.385

-

$0.369

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Continental Prestige Electronics

USA . 2,712 parts In-Stock

1+ parts

$0.392

100+ parts

-

1k+ parts

-

10k+ parts

$0.385

2,712

$0.392

-

-

$0.385

Argo Parts USA

USA . 2,504 parts In-Stock

1+ parts

$0.392

100+ parts

-

1k+ parts

-

10k+ parts

$0.381

2,504

$0.392

-

-

$0.381

Component Stockers USA

USA . 28,295 parts In-Stock

1+ parts

$0.420

100+ parts

$0.400

1k+ parts

$0.360

10k+ parts

$0.360

28,295

$0.420

$0.400

$0.360

$0.360

Modulus Dynamics

Lithuania . 20,817 parts In-Stock

1+ parts

$0.427

100+ parts

$0.410

1k+ parts

$0.393

10k+ parts

-

20,817

$0.427

$0.410

$0.393

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Corohmni

South Africa . 22 parts In-Stock

1+ parts

$0.427

100+ parts

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22

$0.427

-

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Semicontronic

India . 11,419 parts In-Stock

1+ parts

$0.453

100+ parts

$0.442

1k+ parts

$0.439

10k+ parts

-

11,419

$0.453

$0.442

$0.439

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Aztec Data Supply Inc.

USA . 4,660 parts In-Stock

1+ parts

$0.690

100+ parts

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1k+ parts

-

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4,660

$0.690

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Microchip USA

USA . 2,412 parts In-Stock

1+ parts

$3.311

100+ parts

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2,412

$3.311

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Perfect Parts

USA . 15,680 parts In-Stock

1+ parts

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15,680

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Glotronic Ltd.

UK . 3,200 parts In-Stock

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3,200

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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Overview

Upgrade your RF amplifier performance with the BDP954H6327XTSA1 from Infineon Technologies. Designed to deliver high-quality, reliable results, this PNP RF Power Bipolar Junction Transistor (BJT) offers a single configuration that is perfect for various amplifier applications. With a maximum collector-emitter voltage of 100V and a nominal transition frequency of 100MHz, this transistor provides exceptional value and benefits to customers looking to enhance their amplifier systems. Trust in Infineon's expertise and innovation to take your RF projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides good insulation and protection for the transistor, ensuring durability and reliability in various applications.

Polarity or Channel Type: PNP

The PNP configuration is suitable for amplifier applications and provides a positive voltage output, making it ideal for specific circuit designs.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to use in various amplifier applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient PCB assembly, saving space and reducing production costs.

Package Shape: RECTANGULAR

The rectangular package shape allows for a compact design, making it suitable for applications where space is limited.

No. of Terminals: 4

The 4 terminals provide flexibility in circuit connections and enable more versatile integration into different electronic systems.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage ensures reliable operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high performance, efficiency, and reliability in various amplifier applications.

Maximum Collector Current (IC): 3 A

The high maximum collector current allows for handling higher power levels, making it suitable for amplifier applications that require higher output currents.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and solderability, ensuring reliable electrical connections in the circuit.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency indicates good high-frequency performance, making it suitable for applications that require fast switching speeds.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BDP954H6327XTSA1 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDP954H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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