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1075MP

Microsemi

1075MP by Microsemi

1075MP by Microsemi is a NPN RF Power BJT with SINGLE configuration for AMPLIFIER applications. It operates in L BAND, has 4 terminals, and can handle up to 250W power dissipation. With a max operating temperature of 200°C, it features a collector-emitter voltage of 65V and collector current of 6.5A.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Nova Conductors

Japan . 1,000 parts In-Stock

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Vyrian

USA . 642 parts In-Stock

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642

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Corohmni

South Africa . 225 parts In-Stock

1+ parts

$0.367

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225

$0.367

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Aztec Data Supply Inc.

USA . 1,750 parts In-Stock

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$1.537

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1,750

$1.537

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AZTECH Wire

Italy . 642 parts In-Stock

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$11.564

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642

$11.564

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Continental Prestige Electronics

USA . 4,059 parts In-Stock

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4,059

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QUARKTWIN TECHNOLOGY LTD

USA . 2,641 parts In-Stock

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2,641

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Bastille Electronics

Australia . 1,000 parts In-Stock

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1,000

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Argo Parts USA

USA . 75 parts In-Stock

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Overview

Elevate your RF power amplifier performance with the 1075MP by Microsemi. This high-quality NPN BJT transistor offers unparalleled reliability and efficiency, making it a top choice for L Band applications. With a maximum power dissipation of 250W and a maximum collector-emitter voltage of 65V, this transistor delivers exceptional value and benefits to customers looking for superior amplification capabilities. Trust in Microsemi's expertise and choose the 1075MP for all your RF power needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easy integration into amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Surface mount packaging provides ease of installation and integration in modern electronic devices.

Package Shape: ROUND

Round package shape offers efficient heat dissipation and compact design for space-constrained applications.

Terminal Form: FLAT

Flat terminals ensure secure connections and easy soldering during assembly.

Maximum Power Dissipation (Abs): 250 W

High power dissipation capability allows for reliable operation at high power levels without overheating.

Maximum Collector-Emitter Voltage: 65 V

High collector-emitter voltage rating offers robustness and reliability in amplifier circuits.

Maximum Collector Current (IC): 6.5 A

High collector current rating enables the transistor to handle large current loads in amplifier circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and corrosion resistance for long-term reliability.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 1075MP attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Microsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

50 pF

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

L BAND

JESD-30 Code:

O-XRDB-F4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

1075MP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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