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BLY93A

NXP Semiconductors

BLY93A by NXP Semiconductors

BLY93A by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 3 A, operates up to 200 °C, and offers a min power gain of 9 dB in the very high frequency band. Its round, flat package ensures efficient thermal management.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Digiode

USA . 4,318 parts In-Stock

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Vyrian

USA . 439 parts In-Stock

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Anansix

USA . 280 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 48 parts In-Stock

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Sinequanon

UK . 7 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 3 parts In-Stock

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Huijzer Components

Netherlands . 1 parts In-Stock

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One Stop Electronics

USA . 1,490 parts In-Stock

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$47.050

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Northwest PG Solutions

USA . 2,148 parts In-Stock

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Corphita

USA . 1,904 parts In-Stock

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Native Components

USA . 92 parts In-Stock

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UNI Independent Distributors

Spain . 56 parts In-Stock

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Assy Fe

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Overview

Unlock exceptional performance with the BLY93A from NXP Semiconductors, a leader in innovative electronic solutions. This robust RF Power BJT excels in amplifier applications, delivering reliable power gain and efficiency in demanding environments. Crafted for durability and high-frequency operation, it ensures superior signal integrity in communications and broadcasting. Choose BLY93A for unmatched quality and experience the reliability that only NXP can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the product lightweight and cost-effective, while providing adequate protection against environmental factors.

Polarity or Channel Type: NPN

NPN transistors are widely used due to their high efficiency and better thermal stability, making this product suitable for a variety of applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces complexity, enabling straightforward integration into existing systems.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this BJT provides significant amplification capabilities, suitable for audio and RF applications.

Minimum Power Gain (Gp): 9 dB

A minimum power gain of 9 dB signifies effective amplification, ensuring signal integrity for various applications.

Package Shape: ROUND

The round package shape aids in efficient space utilization on circuit boards, allowing for compact designs.

Terminal Form: FLAT

Flat terminals facilitate easy soldering and connection to PCBs, improving manufacturing efficiency.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

This specification indicates the transistor can handle high-frequency signals, making it suitable for advanced communication applications.

No. of Terminals: 4

A four-terminal layout allows for additional functionality such as improved biasing or feedback mechanisms in circuit designs.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount style ensures secure attachment for stable performance and ease in thermal management.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature allows this transistor to function reliably in demanding environments and prolonged use.

Maximum Collector-Emitter Voltage: 36 V

With a maximum collector-emitter voltage of 36 V, this transistor can manage substantial voltages, enhancing its operational versatility.

Transistor Element Material: SILICON

Silicon is well-known for its efficiency and reliability in semiconductor applications, ensuring good performance and longevity.

Maximum Collector Current (IC): 3 A

A maximum collector current rating of 3 A supports high power applications, making this transistor suitable for various amplifier circuits.

Terminal Position: RADIAL

Radial terminal positioning allows for easy integration into PCB layouts, promoting efficient use of space.

Case Connection: ISOLATED

Isolated case connections ensure safety and reduce the risk of short circuits, enhancing the reliability of the device.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLY93A attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

36 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

9 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLY93A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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