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BLY90

NXP Semiconductors

BLY90 by NXP Semiconductors

BLY90 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 8 A, operates up to 200 °C, and supports very high frequency bands. Its flat terminal design allows for easy surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,520 parts In-Stock

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4,520

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Digiode

USA . 3,438 parts In-Stock

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3,438

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Anansix

USA . 605 parts In-Stock

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605

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Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

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2

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ECAB

Sweden . 1 parts In-Stock

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1

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GES GmbH

Germany . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 2,031 parts In-Stock

1+ parts

$2.439

100+ parts

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2,031

$2.439

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One Stop Electronics

USA . 1,185 parts In-Stock

1+ parts

$6.050

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1,185

$6.050

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UNI Independent Distributors

Spain . 3,046 parts In-Stock

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3,046

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Corphita

USA . 765 parts In-Stock

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765

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Native Components

USA . 238 parts In-Stock

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$2.151

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238

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$2.151

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Overview

Elevate your designs with the BLY90 from NXP Semiconductors, a trusted leader in innovation. This high-performance RF Power BJT delivers exceptional amplification and reliability, making it ideal for advanced applications in communications and broadcasting. With its robust construction and impressive thermal management, the BLY90 ensures consistent operation even under demanding conditions. Experience superior quality and performance that empowers your projects and drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides a lightweight, durable housing that protects the transistor while promoting thermal efficiency.

Polarity or Channel Type: NPN

As an NPN transistor, it exhibits good performance in amplification applications, making it ideal for many RF circuits.

Configuration: SINGLE

A single configuration simplifies the circuit design, making integration easier and leading to reduced complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is optimized for audio and RF applications, ensuring high-quality signal reproduction.

Surface Mount: YES

Surface mount capability facilitates automated assembly processes, reducing production costs and improving reliability.

Minimum Power Gain (Gp): 5 dB

A minimum power gain of 5 dB indicates good amplification efficiency, ensuring better signal strength in RF applications.

Package Shape: SQUARE

The square package shape offers efficient space utilization on PCBs, allowing for compact designs without compromising performance.

Terminal Form: FLAT

Flat terminals simplify soldering and enhance the mechanical stability of the connections on a PCB.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequency operation, this transistor is suitable for advanced communication and broadcasting applications.

No. of Terminals: 4

With four terminals, this transistor provides versatility in circuit design and allows for more functionalities.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount style provides robust mounting options, ensuring stable connections in high-performance applications.

Maximum Operating Temperature: 200 °C

A maximum operating temperature of 200 °C ensures reliability and longevity in demanding environments and applications.

Maximum Collector-Emitter Voltage: 18 V

This voltage rating allows for safe operation across a wide range of applications while maintaining efficiency.

Transistor Element Material: SILICON

Silicon as the element material provides excellent thermal stability and electrical properties, ensuring reliable performance.

Maximum Collector Current (IC): 8 A

A maximum collector current of 8 A allows this transistor to handle high power applications efficiently, making it suitable for various uses.

Terminal Position: DUAL

Dual terminal positioning enhances design flexibility and improves electrical performance in circuit layouts.

Case Connection: ISOLATED

Isolated case connection minimizes interference and ensures safer operation, which is crucial for sensitive applications.

Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLY90 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

S-PDPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Minimum Power Gain (Gp):

5 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLY90 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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