Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BLY90 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 8 A, operates up to 200 °C, and supports very high frequency bands. Its flat terminal design allows for easy surface mounting.
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The plastic/epoxy material provides a lightweight, durable housing that protects the transistor while promoting thermal efficiency.
As an NPN transistor, it exhibits good performance in amplification applications, making it ideal for many RF circuits.
A single configuration simplifies the circuit design, making integration easier and leading to reduced complexity.
Designed specifically for amplification, this transistor is optimized for audio and RF applications, ensuring high-quality signal reproduction.
Surface mount capability facilitates automated assembly processes, reducing production costs and improving reliability.
A minimum power gain of 5 dB indicates good amplification efficiency, ensuring better signal strength in RF applications.
The square package shape offers efficient space utilization on PCBs, allowing for compact designs without compromising performance.
Flat terminals simplify soldering and enhance the mechanical stability of the connections on a PCB.
Designed for very high frequency operation, this transistor is suitable for advanced communication and broadcasting applications.
With four terminals, this transistor provides versatility in circuit design and allows for more functionalities.
Post/stud mount style provides robust mounting options, ensuring stable connections in high-performance applications.
A maximum operating temperature of 200 °C ensures reliability and longevity in demanding environments and applications.
This voltage rating allows for safe operation across a wide range of applications while maintaining efficiency.
Silicon as the element material provides excellent thermal stability and electrical properties, ensuring reliable performance.
A maximum collector current of 8 A allows this transistor to handle high power applications efficiently, making it suitable for various uses.
Dual terminal positioning enhances design flexibility and improves electrical performance in circuit layouts.
Isolated case connection minimizes interference and ensures safer operation, which is crucial for sensitive applications.
RF Power Bipolar Junction Transistors (BJT) BLY90 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
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BLY90 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
FDN5618P
Onsemi
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
SS14
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2675M-ADJ/NOPB
National Semiconductor
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
MMBT2222ALT1G
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
EPCS4SI8N
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BAV99
Transys Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
06035C103KAT2A
KYOCERA AVX
06035C103KAT2A by KYOCERA AVX is a SMT ceramic capacitor with 0.01uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and 10% tolerance. Ideal for applications requiring compact surface mount capacitors with stable performance in a wide temperature range.
C0603X104K5RACAUTO
KEMET Corporation
C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.
ULN2803ADWR
Texas Instruments
ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
FT232RQ-REEL
FTDI
FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.
2N2222A
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
Semicoa
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
Gulf Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MSC81250M
STMicroelectronics
STMicroelectronics' MSC81250M is a NPN RF BJT transistor with 600W power dissipation, ideal for L Band switching applications. Featuring a single configuration, it has a max collector current of 17.8A and operates at up to 200 °C temperature.
SD8250
STMicroelectronics' SD8250 is a NPN RF BJT transistor with 575W power dissipation, ideal for L Band applications. Featuring single configuration, it has a max collector current of 20A and operates at up to 250 °C. Suitable for switching purposes, this transistor is surface mountable with a ceramic-metal package body.
RZB12100Y
NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum Power Gain (Gp): 7 dB; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLV934
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Terminal Form: FLAT; Minimum Power Gain (Gp): 9 dB;
BLW96
The NXP Semiconductors BLW96 is a single NPN RF Power BJT with 4 terminals, operating in the very high frequency band up to 245 MHz. It features a max power dissipation of 340 W and can handle a collector current of up to 12 A. Ideal for amplifier applications, this transistor has a collector-emitter voltage of 55 V and operates at temperatures up to 200°C.
MS2209
Microsemi
MS2209 by Microsemi is a NPN BJT transistor with 7A IC, suitable for L Band applications. It has a ceramic-metal-sealed co-fired package and operates at max temp of 200°C. Ideal for amplifier circuits due to its single configuration and square package shape.
AM81214-015
STMicroelectronics AM81214-015 is an NPN BJT transistor with 8.6 dB min power gain, ideal for L Band applications. It has a max power dissipation of 37.5W and operates at temperatures up to 250 °C, suitable for switching purposes in RF circuits. The package style is flange mount with a dual terminal position for easy installation.
SD1728F
SD1728F by STMicroelectronics is a NPN RF Power BJT with 55V VCEO, 40A IC, and 360pF Cob. Ideal for high-frequency amplifier applications, it features a plastic/epoxy package, flat terminals, and operates up to 200 °C. Suitable for surface mount with flange mount style.
RN2731B110W
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 12 A; Case Connection: BASE;
AM80610-030
AM80610-030 by STMicroelectronics is an NPN RF power BJT designed for switching applications. It features a max power dissipation of 57W, operates at ultra-high frequencies, and withstands temperatures up to 200 °C. Ideal for high-performance electronic circuits.
BLS2731-50TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
BLS2731-110TRAY
NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Form: FLAT;
PTB20228
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Package Style (Meter): CHIP CARRIER; Maximum Collector-Emitter Voltage: 20 V;
MRF658
MRF658 by Motorola is a NPN RF BJT transistor with 4.15 dB min power gain, suitable for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 175 W, operates at up to 150°C, and can handle a collector current of 15 A.
SD1898
SD1898 by STMicroelectronics is a NPN RF BJT transistor with 87.5W power dissipation, suitable for L Band applications. It has a max collector current of 7.8A and operates at up to 200 °C temperature, making it ideal for amplifier circuits in high-frequency settings. The package style is flange mount with a square shape and flat terminals, offering easy surface-mount integration.
SD4013
SD4013 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and max power dissipation of 70W. Operating in the ultra-high frequency band, it has a max collector-emitter voltage of 30V. Ideal for applications requiring high-power amplification in RF circuits.
SD1487
STMicroelectronics' SD1487 is a NPN RF Power BJT with 18V VCE, 20A IC, and high-frequency band. Ideal for amplifier applications, it features a plastic/epoxy package, single configuration, and radial terminal position in a round shape. Operating up to 200 °C, it has a flange mount style with 4 terminals.
MAX2602ESA+
Analog Devices
MAX2602ESA+ by Analog Devices is a NPN BJT transistor with 8 terminals, operating at 150°C. It has a max collector-emitter voltage of 15V and can handle a collector current of 1.2A. Ideal for amplifier applications in the ultra-high frequency band due to its small outline package style.
MRF454
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 40;
2SC2639
Toshiba
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 3.5 A; Maximum Operating Temperature: 175 Cel;
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BLY91A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .75 A; Maximum Collector-Emitter Voltage: 36 V; Transistor Element Material: SILICON;
BLY91C
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 525 MHz; Maximum Collector Current (IC): .9 A; No. of Elements: 1;
BLY91C/01
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .75 A; No. of Elements: 1;
BLY92A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): POST/STUD MOUNT; Case Connection: ISOLATED;
BLY92C
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 625 MHz; Maximum Collector Current (IC): 1.75 A; Terminal Position: RADIAL;
BLY92C/01
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): 1.5 A; JESD-30 Code: O-CRDB-F4;
BLY93A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Minimum Power Gain (Gp): 9 dB; Maximum Operating Temperature: 200 Cel;
BLY93C
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 625 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLY94
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Base Capacitance: 130 pF;
BLY90
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 8 A;
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